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TC74VHC132F/FN/FT/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74VHC132F,TC74VHC132FN,TC74VHC132FT,TC74VHC132FK
Quad 2-Input Schmitt NAND Gate
The TC74VHC132 is an advanced high speed CMOS 2-INPUT SCHMITT NAND GATE fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.
Pin configuration and function are the same as the TC74VHC00 but the inputs have hysteresis and with its schmitt trigger function, the TC74VHC132 can be used as a line receivers which will receive slow input signals.
An input protection circuit ensures that 0 to 5.5 V can be applied to the input pins without regard to the supply voltage. This device can be used to interface 5 to 3 V systems and two supply systems such as battery back up.
This circuit prevents device destruction due to mismatched supply and input voltages.
Features
• High speed: tpd = 4.9 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 2 µA (max) at Ta = 25°C • Power down protection is provided on all inputs. • Balanced propagation delays: tpLH ∼− tpHL • Wide operating voltage range: VCC (opr) = 2 to 5.5 V • Low noise: VOLP = 0.8 V (max) • Pin and function compatible with 74ALS132
Note: xxxFN (JEDEC SOP) is not available in Japan.
TC74VHC132F
TC74VHC132FN
TC74VHC132FT
TC74VHC132FK
Weight
SOP14-P-300-1.27A
: 0.18 g (typ.)
SOP14-P-300-1.27
: 0.18 g (typ.)
SOL14-P-150-1.27
: 0.12 g (typ.)
TSSOP14-P-0044-0.65A : 0.06 g (typ.)
VSSOP14-P-0030-0.50 : 0.02 g (typ.)
1 2006-02-01
Pin Assignment
1A 1 1B 2 1Y 3 2A 4 2B 5 2Y 6 GND 7
(top view)
Truth Table
ABY
L LH L HH HLH HHL
14 VCC 13 4B 12 4A 11 4Y 10 3B 9 3A 8 3Y
System Diagram, Waveform
A B
VIN (A)
VOUT (Y)
Y VH VP
VN
TC74VHC132F/FN/FT/FK
IEC Logic Symbol
1A (1) 1B (2) 2A (4) 2B (5) 3A (9) 3B (10) 4A (12) 4B (13)
&
(3) 1Y (6) 2Y (8) 3Y (11) 4Y
2 2006-02-01
TC74VHC132F/FN/FT/FK
Absolute Maximum Ratings (Note)
Characteristics
Symbol
Rating
Unit
Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature
VCC VIN VOUT IIK IOK IOUT ICC PD Tstg
−0.5 to 7.0 −0.5 to 7.0 −0.5 to VCC + 0.5
−20 ±20 ±25 ±50 180 −65 to 150
V V V mA mA mA mA mW °C
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction.
Recommended Operating Conditions (Note)
Characteristics
Symbol
Rating
Unit
Supply voltage Input voltage Output voltage Operating temperature
VCC VIN VOUT Topr
2.0 to 5.5 0 to 5.5 0 to VCC −40 to 85
V V V °C
Note: The recommended operating conditions are required to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND.
3 2006-02-01
Electrical Characteristics DC Characteristics
Characteristics
Symbol
Test Condition
Positive threshold voltage
Negative threshold voltage
Hys.