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TC7S02FU Dataheets PDF



Part Number TC7S02FU
Manufacturers Toshiba
Logo Toshiba
Description 2-INPUT NOR GATE
Datasheet TC7S02FU DatasheetTC7S02FU Datasheet (PDF)

TC7S02F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7S02F, TC7S02FU 2-Input NOR Gate Features • High Speed • Low power dissipation • High noise immunity : tpd = 7ns (typ.) at VCC = 5 V : ICC = 1 μA (max) at Ta = 25°C : VNIH = VNIL = 28% VCC (min) • Output drive capability : 5 LSTTL Loads • Symmetrical Output Impedance : |IOH| = IOL= 2mA (min) • Balanced propagation delays : tpLH ≒ tpHL • Wide operating voltage range : VCC = 2 to 6 V Marking E3 Product name TC7S02.

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TC7S02F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7S02F, TC7S02FU 2-Input NOR Gate Features • High Speed • Low power dissipation • High noise immunity : tpd = 7ns (typ.) at VCC = 5 V : ICC = 1 μA (max) at Ta = 25°C : VNIH = VNIL = 28% VCC (min) • Output drive capability : 5 LSTTL Loads • Symmetrical Output Impedance : |IOH| = IOL= 2mA (min) • Balanced propagation delays : tpLH ≒ tpHL • Wide operating voltage range : VCC = 2 to 6 V Marking E3 Product name TC7S02F TC7S02FU (SMV) (USV) Absolute Maximum Ratings (Ta = 25°C) Weight SSOP5-P-0.95 SSOP5-P-0.65A : 0.016 g (typ.) : 0.006 g (typ.) Characteristics Supply voltage DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature Lead temperature (10 s) Symbol VCC VIN VOUT IIK IOK IOUT ICC PD Tstg TL Rating −0.5 to 7.0 −0.5 to VCC + 0.5 −0.5 to VCC + 0.5 ±20 ±20 ±12.5 ±25 200 −65 to 150 260 Unit Pin Assignment (top view) V V V IN B 1 5 VCC mA mA IN A 2 mA mA GND 3 4 OUT Y mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1987-08 1 2014-03-01 IEC Logic Symbol IN A >1 IN B Operating Ranges Characteristics Supply voltage Input voltage Output voltage Operating temperature Input rise and fall time OUT Y Truth Table A B Y L L H L H L H L L H H L TC7S02F/FU Symbol Rating Unit VCC VIN VOUT Topr tr , tf 2.0 to 6.0 V 0 to VCC V 0 to VCC V −40 to 85 °C 0 to 1000 (VCC = 2.0 V) 0 to 500 (VCC = 4.5 V) ns 0 to 400 (VCC = 6.0 V) 2 2014-03-01 TC7S02F/FU Electrical Characteristics DC Characteristics Characteristics High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage Input leakage current Quiescent supply current Symbol Test Condition VCC (V) 2.0 VIH ⎯ 4.5 6.0 2.0 VIL ⎯ 4.5 6.0 2.0 IOH = −20 μA 4.5 VOH VIN = VIL 6.0 IOH = −2 mA 4.5 IOH = −2.6 mA 6.0 2.0 IOL = 20 μA 4.5 VOL VIN = VIH or VIL 6.0 IOL = 2 mA 4.5 IOL = 2.6 mA 6.0 IIN VIN = VCC or GND 6.0 ICC VIN = VCC or GND 6.0 Ta = 25°C Min Typ. Max 1.5 ⎯ ⎯ 3.15 ⎯ ⎯ 4.2 ⎯ ⎯ ⎯ ⎯ 0.5 ⎯ ⎯ 1.35 ⎯ ⎯ 1.8 1.9 2.0 ⎯ 4.4 4.5 ⎯ 5.9 6.0 ⎯ 4.18 4.31 ⎯ 5.68 5.80 ⎯ ⎯ 0.0 0.1 ⎯ 0.0 0.1 ⎯ 0.0 0.1 ⎯ 0.17 0.26 ⎯ 0.18 0.26 ⎯ ⎯ ±0.1 ⎯ ⎯ 1.0 Ta = −40 to 85°C Unit Mi.


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