TC7SZ08

TC7SZ08AFE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ08AFE 2 Input AND Gate Features · High output drive: ±24 mA (typ.) @VCC = 3 V · Super high speed operation: tPD 2.7 ns (typ.) @VCC = 5 V, 50 pF · Operation voltage range: VCC (opr) = 1.8~5.5 V · Supply voltage data retention: VCC = 1.5~5.5 V · Latch-up performance: ±500 mA · ESD performance: Human body model > ±2000 V Machine model > ±200 V Weight: 0.003 g (typ.) · Power down protection is provided on all inputs. · Matches the performance of TC74LCX series when operated at 3.3 V VCC · Input rise and fall time (tr, tf) (recommended operation condition) @VCC = 1.8 V, 2.5 V ± 0.2 V: 0~20 ns/V @VCC = 3.3 V ± 0.3 V: 0~10 ns/V @VCC = 5.5 V ± 0.5 V: 0~5 ns/V Maximum Ratings (Ta = 25°C) Characteristics Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature Lead temperature (10 s) Symbol VCC VIN VOUT IIK IOK IOUT ICC PD Tstg TL Rating -0.5~6 -0.5~6 -0.5~VCC + 0.5 ±20 ±20 ±50 ±50 150 -65~150 260 Unit V V V mA mA mA mA mW °C °C 1 2003-01-28 Electrical Characteristics DC Characteristics Characteristics Symbol Test Circuit High-level input voltage VIH ¾ Low-level input voltage VIL ¾ Test Condition ¾ ¾ High-level output voltage VOH IOH = -100 mA ¾ VIN = VIH IOH = -8 mA IOH = -16 mA IOH = -24 mA IOH = -32 mA Low-level output voltage VOL Input leakage curren...