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TC7W08FU

Toshiba

Dual 2-Input AND Gate

TC7W08FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7W08FU, TC7W08FK Dual 2-Input AND Gate Featur...


Toshiba

TC7W08FU

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Description
TC7W08FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7W08FU, TC7W08FK Dual 2-Input AND Gate Features High Speed Low power dissipation : tpd = 6ns (typ.) at VCC = 5V : ICC = 1μA (max) at Ta = 25°C High noise immunity : VNIH = VNIL = 28% VCC (min) Output drive capability : 10 LSTTL Loads Symmetrical Output Impedance : |IOH| = IOL= 4mA (min) Balanced propagation delays : tpLH ≈ tpHL Wide operating voltage range : VCC = 2 to 6V TC7W08FU TC7W08FK (SM8) Marking SM8 US8 Product Name 7 W 0 8 Lot No. W 08 Weight SSOP8-P-0.65 SSOP8-P-0.50A (US8) : 0.02 g (typ.) : 0.01 g (typ.) Pin Assignment (top view) 1A 1 1B 2 2Y 3 GND 4 8 VCC 7 1Y 6 2B 5 2A Start of commercial production 1991-09 1 2014-10-23 TC7W08FU/FK Absolute Maximum Ratings (Ta = 25°C) Characteristics Supply voltage DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature Lead temperature (10 s) Symbol VCC VIN VOUT IIK IOK IOUT ICC PD Tstg TL Rating Unit −0.5 to 7.0 V −0.5 to VCC + 0.5 V −0.5 to VCC + 0.5 V ±20 mA ±20 mA ±25 mA ±25 mA 300 (SM8) mW 200 (US8) −65 to 150 °C 260 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperatur...




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