Document
TC7WH245FU/FK
TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
TC7WH245FU, TC7WH245FK
Dual Bus Transceiver
FEATURES
• High Speed
: tpd = 4.0 ns (typ.)
at VCC = 5 V, CL = 15pF
• Low Power Dissipation
: ICC = 2 μA (max) at Ta = 25°C
• High Noise Immunity
: VNIH = VNIL = 28% VCC (min)
• Balanced Propagation Delays: tpLH ≈ tpHL
• Wide Operating Voltage Range: VCC (opr) = 2 to 5.5 V
• Low Noise
: VOLP = 0.8 V (max)
APPLICATION NOTES
1) Do not apply a signal to any bus terminal when it is in the output mode. Damage may result.
2) All floating (high impedance) bus terminals must have their input levels fixed by means of pull up or pull down resistors.
3) A parasitic diode is formed between the bus and Vcc terminals. Therefore bus terminal can not be used to interface 5V to 3V systems directly.
TC7WH245FU
TC7WH245FK
Weight SSOP8-P-0.65 : 0.02 g (typ.) SSOP8-P-0.50A : 0.01 g (typ.)
Marking
SM8
Product Name
US8
H 2 4 5 Lot No.
WH 245
Pin Assignment (top view)
VCC G B1 B2
8 765
1 234 DIR A1 A2 GND
Start of commercial production
1999-12
1
2014-03-01
TC7WH245FU/FK
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Supply Voltage DC Input Voltage DC Output Voltage Input Diode Current Output Diode Current DC Output Current DC Vcc/Ground Current
Power Dissipation
Strage Temperature LeadTemperature(10s)
VCC VIN VOUT IIK IOK IOUT ICC
PD
Tstg TL
−0.5 to 7
V
−0.5 tp 7
V
−0.5 toVCC + 0.5
V
−20
mA
±20 (Note 1)
mA
±25
mA
±50
mA
300(SM8) mW
200(US8)
−65 to 150
°C
260
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: VOUT < GND, VOUT > VCC
IEC Logic Symbol
(7) G DIR (1)
(2) A1
(3) A2
G3 3 EN 1 [BA] 3 EN 2 [AB]
1 2
Operating Ranges
Characteristic Supply Voltage Input Voltage Output Voltage Operating Temperature
Input Rise and Fall Time
(6) B1
(5) B2
Truth Table
Input
G
DIR
L
L
L
H
H
X
Function A BUS B BUS OUTPUT INPUT INPUT OUTPUT High impedance
Output
A=B B=A
Z
X: Don’t care Z: High impedance
Symbol
Rating
Unit
VCC VIN VOUT Topr
dt/dv
2 to 5.5 0 to 5.5 0 to VCC −40 to 85 0 to100 (VCC = 3.3 ± 0.3 V) 0 to 20 (VCC = 5.0 ± 0.5 V)
V V V °C
ns/V
2
2014-03-01
TC7WH245FU/FK
Electrical Characteristics
DC Characteristics
Characteristic
High-Level Input Voltage
Low-Level Input Voltage
High-Level Output Voltage
Low-Level Output Voltage
3-State Output Off-State Current Input Leakage Current Quiescent Spply Current
Symbol
Test Condition
Ta = 25°C
Ta = −40 to 85°C
Unit
VCC (V) Min Typ. Max Min
Max
2.0
1.5
⎯
⎯
1.5
⎯
VIH
⎯
3.0 to VCC 5.5 × 0.7
⎯
⎯
VCC × 0.7
⎯
V
2.0
⎯
⎯
0.5
⎯
0.5
VIL
⎯
3.0 to 5.5
⎯
⎯
VCC × 0.3
⎯
VCC × 0.3
2.0
1.9
2.0
⎯
1.9
⎯
IOH = −50 μA 3.0
2.9
3.0
⎯
2.9
⎯
VOH
VIN = VIH or VIL
4.5
4.4
4.5
⎯
4.4
⎯
IOH = −4 mA
3.0
2.58
⎯
⎯
2.48
⎯
IOH = −8 mA
4.5
3.94
⎯
⎯
3.80
⎯
V
2.0
⎯
0.0 0.1
⎯
0.1
IOL = 50 μA
3.0
⎯
0.0 0.1
⎯
0.1
VOL
VIN = VIH or VIL
4.5
⎯
0.0 0.1
⎯
0.1
IOL = 4 mA
3.0
⎯
⎯
0.36
⎯
0.44
IOL = 8 mA
4.5
⎯
⎯
0.36
⎯
0.44
VIN = VIH or VIL IOZ
VOUT = VCC or GND
5.5
⎯
⎯ ±0.25 ⎯
±2.50 μA
IIN VIN = 5.5 V or GND
0 to 5.5 ⎯
⎯
±0.1
⎯
±1.0 μA
ICC VIN = VCC or GND
5.5
⎯
⎯
2.0
⎯
20.0 μA
3
2014-03-01
TC7WH245FU/FK
AC Characteristics (Input: tr = tf = 3 ns)
Characteristic
Propagation Delay Time
3-State Output Enable Time
3-State Output Disable Time Output to Output Skew Input Capacitance Bus Input Capacitance Power Dissipation Capacitance
Ta = 25°C
Ta =−40 to 85°C
Symbol Test Condition
Unit
VCC (V) CL (pF) Min Typ. Max Min
Max
15
⎯
5.8
8.4
1.0
10.0
3.3 ± 0.3
tpLH ⎯
50
⎯
8.3 11.9 1.0
13.5
ns
tpHL
15
⎯
4.0
5.5
1.0
6.5
5.0 ± 0.5
50
⎯
5.5
7.5
1.0
8.5
tpZL tpZH
RL = 1 kΩ
15 3.3 ± 0.3
50
15 5.0 ± 0.5
50
⎯
8.5 13.2 1.0
15.5
⎯ 11.0 16.7 1.0
19.0
ns
⎯
5.8
8.5
1.0
10.0
⎯
7.3 10.6 1.0
12.0
tpLZ tpHZ
RL = 1 kΩ
3.3 ± 0.3 50 5.0 ± 0.5 50
⎯ 11.5 15.8 1.0
18.0
ns
⎯
7.0
9.7
1.0
11.0
tosLH tosHL
3.3 ± 0.3 50 (Note 2)
5.0 ± 0.5 50
⎯
⎯
1.5
⎯
⎯
⎯
1.0
⎯
1.5 ns
1.0
CIN DIR, G CI/O An, Bn
⎯
4
10
⎯
10
pF
⎯
8
⎯
⎯
⎯
pF
CPD
(Note 3) ⎯
21
⎯
⎯
⎯
pF
Note 2: .