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TCRT1000 Dataheets PDF



Part Number TCRT1000
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Reflective Optical Sensor
Datasheet TCRT1000 DatasheetTCRT1000 Datasheet (PDF)

www.vishay.com TCRT1000, TCRT1010 Vishay Semiconductors Reflective Optical Sensor with Transistor Output TCRT1000 TCRT1010 21836 A CE C 19155_1 DESCRIPTION The TCRT1000 and TCRT1010 are reflective sensors which include an infrared emitter and phototransistor in a leaded package which blocks visible light. FEATURES • Package type: leaded • Detector type: phototransistor • Dimensions (L x W x H in mm): 7 x 4 x 2.5 • Peak operating distance: 1 mm • Operating range within > 20 % relative co.

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www.vishay.com TCRT1000, TCRT1010 Vishay Semiconductors Reflective Optical Sensor with Transistor Output TCRT1000 TCRT1010 21836 A CE C 19155_1 DESCRIPTION The TCRT1000 and TCRT1010 are reflective sensors which include an infrared emitter and phototransistor in a leaded package which blocks visible light. FEATURES • Package type: leaded • Detector type: phototransistor • Dimensions (L x W x H in mm): 7 x 4 x 2.5 • Peak operating distance: 1 mm • Operating range within > 20 % relative collector current: 0.2 mm to 4 mm • Typical output current under test: IC = 0.5 mA • Daylight blocking filter • Emitter wavelength: 950 nm • Lead (Pb)-free soldering released • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Optoelectronic scanning and switching devices i.e., index sensing, coded disk scanning etc. (optoelectronic encoder assemblies for transmissive sensing). PRODUCT SUMMARY PART NUMBER DISTANCE FOR MAXIMUM CTRrel (1) (mm) TCRT1000 1 TCRT1010 1 Notes (1) CTR: current transfere ratio, Iout/Iin (2) Conditions like in table basic charactristics/sensor DISTANCE RANGE FOR RELATIVE Iout > 20 % (mm) 0.2 to 4 0.2 to 4 TYPICAL OUTPUT CURRENT UNDER TEST (2) (mA) 0.5 0.5 DAYLIGHT BLOCKING FILTER INTEGRATED Yes Yes ORDERING INFORMATION ORDERING CODE TCRT1000 TCRT1010 Note (1) MOQ: minimum order quantity PACKAGING Bulk Bulk VOLUME (1) MOQ: 1000 pcs, 1000 pcs/bulk MOQ: 1000 pcs, 1000 pcs/bulk REMARKS Straight leads Bent leads ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE SENSOR Total power dissipation Tamb ≤ 25 °C Ptot 200 Ambient temperature range Tamb - 40 to + 85 Storage temperature range Tstg - 40 to + 100 Soldering temperature 2 mm distance to package, t≤5s Tsd 260 INPUT (EMITTER) Reverse voltage VR 5 Forward current Forward surge current Power dissipation tp ≤ 10 μs Tamb ≤ 25 °C IF IFSM PV 50 3 100 Junction temperature Tj 100 UNIT mW °C °C °C V mA A mW °C Rev. 1.8, 11-Jun-12 1 Document Number: 83752 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com TCRT1000, TCRT1010 Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE OUTPUT (DETECTOR) Collector emitter voltage Emitter collector voltage Collector current Power dissipation Junction temperature Tamb ≤ 25 °C VCEO VECO IC PV Tj 32 5 50 100 100 UNIT V V mA mW °C ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) 300 Coupled device 200 P - Power Dissipation (mW) Phototransistor 100 IR - diode 0 0 25 50 75 100 95 11071 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. SENSOR Collector current VCE = 5 V, IF = 20 mA, d = 1 mm (figure 2) IC (1) 0.3 Cross talk current Collector emitter saturation voltage VCE = 5 V, IF = 20 mA, (figure 1) IF = 20 mA, IC = 0.1 mA, d = 1 mm (figure 2) ICX (2) VCEsat (1) INPUT (EMITTER) Forward voltage Radiant intensity Peak wavelength Virtual source diameter IF = 50 mA IF = 50 mA, tp = 20 ms IF = 100 mA Method: 63 % encircled energy VF Ie λP d 940 OUTPUT (DETECTOR) Collector emitter voltage Emitter collector voltage Collector dark current IC = 1 mA IE = 100 μA VCE = 20 V, IF = 0 A, E = 0 lx VCEO VECO ICEO 32 5 Notes (1) Measured with the “Kodak neutral test card”, white side with 90 % diffuse reflectance (2) Measured without reflecting medium TYP. 0.5 1.25 1.2 MAX. 1 0.3 1.6 7.5 200 UNIT mA μA V V mW/sr nm mm V V nA Rev. 1.8, 11-Jun-12 2 Document Number: 83752 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com TCRT1000, TCRT1010 Vishay Semiconductors d Emitter ~~~ Reflecting medium (Kodak neutral test card) ~~~ Detector A CE C 95 10893 Fig. 2 - Test Condition BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 IF - Forward Current (mA) 100 10 1 0.1 0 96 11862 0.4 0.8 1.2 1.6 VF - Forward Voltage (V) 2.0 Fig. 3 - Forward Current vs. Forward Voltage I C - Collector Current (mA) 10.0 Kodak Neutral Card (White Side) d = 1 mm IF = 50 mA 1.0 20 mA 10 mA 5 mA 0.1 2 mA 0.01 0.1 1 10 95 11075 VCE - Collector Emitter Voltage (V) 100 Fig. 5 - Collector Current vs. Collector Emitter Voltage CTR rel - Relative Current Transfer Ratio 2.0 1.5 1.0 0.5 VCE = 5 V IF = 20 mA d = 1 mm 0 - 25 0 25 50 75 95 11074 Tamb - Ambient Temperature (°C) 100 Fig. 4 - Relative.


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