TCS800

R.-.061300 TCS800 800 Watts, 50 Volts, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION The TCS800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030 MHz, with the pulse width and duty required for TCAS applications. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55SM Style 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @25°C1 1944 Maximum Voltage and Current Collector to Base Voltage (BVces) 65 Emitter to Base Voltage (BVebo) 3.5 50 Collector Current (Ic) Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +230 W V V A °C °C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL Pout Pin Pg ηc RL Pd VSWR CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Input Return Loss Pulse Droop Load Mismatch Tolerance F = 1030 MHz TEST CONDITIONS F = 1030 MHz VCC = 50 Volts PW = 32 µsec DF = 1% MIN 800 120 8.0 9.0 45 -12 0.5 4:1 TYP MAX UNITS W W dB % dB dB FUNCTIONAL CHARACTERISTICS @ 25°C BVebo* BVces hFE* θjc1 Emitter to Base Breakdown Collector to Emitter Breakdown DC – Current Gain Thermal Resistance Ie = 70 mA Ic = 100 mA Vce = 5V, Ic = 5A 3.5 65 20 0.09 V V °C/W NOTE 1: At rated output power and pulse conditions. *: Not measureable due to internal EB r...