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TD62306P Dataheets PDF



Part Number TD62306P
Manufacturers Toshiba
Logo Toshiba
Description 6CH LOW SATURATION SINK DRIVER
Datasheet TD62306P DatasheetTD62306P Datasheet (PDF)

TD62306P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62306P,TD62306F 6CH LOW SATURATION SINK DRIVER The TD62306P, TD62306F are comprised of six NPN low saturation drivers. All units feature integral clamp diodes for switching inductive loads and protective diodes against a negative input voltage. Applications include relay, hammer, lamp and LED driver. FEATURES l Low saturation output voltage : VCE (sat) = 0.6 V (Max.) @IOUT = 120 mA l Output rating (single output) 20 V.

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TD62306P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62306P,TD62306F 6CH LOW SATURATION SINK DRIVER The TD62306P, TD62306F are comprised of six NPN low saturation drivers. All units feature integral clamp diodes for switching inductive loads and protective diodes against a negative input voltage. Applications include relay, hammer, lamp and LED driver. FEATURES l Low saturation output voltage : VCE (sat) = 0.6 V (Max.) @IOUT = 120 mA l Output rating (single output) 20 V (Min.) / 150 mA (Max.) l Inputs compatible with 5~15 V PMOS, CMOS l Input protective diodes against a negative input voltage l Package type−P : DIP−14 pin l Package type−F : SOP−14 pin PIN CONNECTION (TOP VIEW) Weight DIP14−P−300−2.54 : 1.11 g (Typ.) SOP14−P−225−1.27 : 0.16 g (Typ.) SCHEMATICS (EACH DRIVER) Note: The input and output parasitic diodes cannot be used as clamp diodes. 1 2001-06-28 MAXIMUM RATINGS (Ta = 25°C) TD62306P/F CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage Output Sustaining Voltage Output Current Input Voltage Input Current Clamp Diode Reverse Voltage Clamp Diode Forward Current Power Dissipation Operating Temperature Storage Temperature P F P F VCC VCE (SUS) IOUT VIN IIN VR IF PD Topr Tstg −0.5~20 V −0.5~VCC + 0.5 V 150 mA / ch −37~20 V 1.5 mA 20 V 120 mA 1.0 0.625 (Note) W −30~75 −40~85 °C −55~150 °C Note: On Glass Epoxy PCB (50 × 50 × 1.6 mm Cu 30%) RECOMMENDED OPERATING CONDITIONS (Ta = −40~85°C for Type−F and Ta = −30~75°C for Type−P) CHARACTERISTIC SYMBOL CONDITION MIN TYP. MAX UNIT Supply Voltage Output Current Input Voltage Clamp Diode Reverse Voltage Clamp Diode Forward Current Power Dissipation P F VCC IOUT VIN VR IF PD ― DC 1 Circuit Tpw = 25 ms, Duty = 10% 6 Circuits ― ― ― ― 4.75 0 0 (Note) −35 ― ― ― ― ― 18 V ― 120 mA / ch ― 100 ― VCC V ― 18 V ― 120 mA ― 0.44 W ― 0.325 Note: On Glass Epoxy PCB (50 × 50 × 1.6 mm Cu 30%) 2 2001-06-28 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Output Leakage Current Output Saturation Voltage P F DC Forward Current Transfer Ratio Input Current Output On Output Off Clamp Diode Forward Voltage Supply Current Turn−On Delay Turn−Off Delay Output On Output Off SYMBOL ICEX VCE (sat) hFE IIN (ON) IIN (OFF) VF ICC (ON) ICC (OFF) tON tOFF TEST CIR− CUIT TEST CONDITION 1 VCC = 18 V VOUT = 18 V Ta = 75°C Ta = 85°C 2 VCC = 5 V, IIN = 0.2 mA IOUT = 120 mA 2 VCC = 5 V, VOUT = 2 V IOUT = 120 mA 3 VIN = 5 V, IOUT = 120 mA VIN = 15 V, IOUT = 120 mA 4 VIN = -35 V 5 IF = 120 mA 6 VCC = VIN = 5 V VCC = VIN = 15 V 6 VCC = 18 V, VIN = 0 V 7 VCC = 18 V, RL = 150 Ω CL = 15 pF TEST CIRCUIT 1. ICEX 2. hFE, VCE (sat) TD62306P/F MIN TYP. MAX UNIT ― ― 100 µA ― ― 100 ― 0.45 0.6 V 1000 ― ― ― ― 0.16 0.23 mA ― 0.66 0.94 ― ― −10 µA ― 1.25 1.6 V ― 4.0 6.0 mA / ― 14.0 22 Gate ― ― 10 µA ― 0.1 ― µs ― 0.8 ― µs 3. IIN (ON) 4. IIN (OFF) 3 2001-06-28 5. VF 7. tON, tOFF 6. ICC TD62306P/F Note 1: Pulse Width 50 µs, Duty Cycle 10% Output Impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns Note 2: CL includes probe and jig capacitance PRECAUTIONS for USING This IC does not include built-in protection circuits for excess current or overvoltage. If this IC is subjected to excess current or overvoltage, it may be destroyed. Hence, the utmost care must be taken when systems which incorporate this IC are designed. Utmost care is necessary in the design of the output line, VCC and GND line since IC may be destroyed due to short−circuit between outputs, air contamination fault, or fault by improper grounding. 4 2001-06-28 TD62306P/F 5 2001-06-28 PACKAGE DIMENSIONS DIP14−P−300−2.54A TD62306P/F Unit: mm Weight: 1.11 g (Typ.) 6 2001-06-28 PACKAGE DIMENSIONS SOP14−P−225−1.27 TD62306P/F Unit: mm Weight: 0.16 g (Typ.) 7 2001-06-28 TD62306P/F RESTRICTIONS ON PRODUCT USE 000707EBA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA p.


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