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TD62476P Dataheets PDF



Part Number TD62476P
Manufacturers Toshiba
Logo Toshiba
Description 2CH PERIPHERAL AND/NAND/OR/NOR/DRIVERS
Datasheet TD62476P DatasheetTD62476P Datasheet (PDF)

TD62476~479P TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62476P,TD62477P,TD62478P,TD62479P 2CH PERIPHERAL AND / NAND / OR / NOR DRIVERS The TD62476P, TD62477P, TD62478P, TD62479P are comprised of two NPN single output stages and control inputs which can gate the outputs. All units feature integral clamp diodes for switching inductive loads. Applications include relay, hammer, lamp and display (LED) drivers. FEATURES l Output current (single output) 350 mA (Max) l High susta.

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TD62476~479P TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62476P,TD62477P,TD62478P,TD62479P 2CH PERIPHERAL AND / NAND / OR / NOR DRIVERS The TD62476P, TD62477P, TD62478P, TD62479P are comprised of two NPN single output stages and control inputs which can gate the outputs. All units feature integral clamp diodes for switching inductive loads. Applications include relay, hammer, lamp and display (LED) drivers. FEATURES l Output current (single output) 350 mA (Max) l High sustaining voltage output 35 V (Min) l Output clamp diodes l Inputs compatible with TTL and 5 V CMOS l Standard supply voltage l Package type−P: DIP−8 pin Weight: 0.45 g (Typ.) TD62476P INPUT CIN I OUTPUT 00 ON 0 1 OFF 1 0 OFF 1 1 OFF TD62477P INPUT CIN I OUTPUT 0 0 OFF 0 1 OFF 1 0 OFF 11 ON TD62478P INPUT CIN I OUTPUT 00 ON 0 1 OFF 1 0 OFF 1 1 OFF TD62479P INPUT CIN I OUTPUT 0 0 OFF 01 ON 10 ON 11 ON PIN CONNECTION (TOP VIEW) TD62476P TD62477P TD62478P TD62479P 1 2001-07-04 EQUIVALENT OF INPUTS AND OUTPUTS Equivalent of inputs Equivalent of outputs TD62476~479P Note: The input and output parasitic diodes cannot be used as clamp diodes. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTICS SYMBOL RATING Supply Voltage Input Voltage Output Sustaining Voltage Output Current Clamp Diode Reverse Voltage Clamp Diode Forward Current Power Dissipation Operating Temperature Storage Temperature VCC VIN VCE (SUS) IOUT VR IF PD (Note) Topr Tstg −0.5~7.0 −0.5~5.5 −0.5~35 350 35 300 0.9 −30~75 −55~150 Note: Delated above 25°C in the proportion of 7.2 mW / °C. UNIT V V V mA / ch V mA W °C °C RECOMMENDED OPERATING CONDITIONS (Ta = −30~75°C) CHARACTERISTIC Supply Voltage Output Sustaining Voltage Output Current Input Voltage Clamp Diode Reverse Voltage Clamp Diode Forward Current Power Dissipation SYMBOL CONDITION VCC VCE (SUS) IOUT VIN VR IF PD DC 1 Circuit DC 2 Circuits ― ― ― ― ― ― MIN TYP. MAX UNIT 4.5 5.0 5.5 V 0 ― 35 V 0 ― 300 mA / 0 ― 200 ch 4.5 ― VCC V ― ― 35 V ― ― 300 mA ― ― 0.4 W 2 2001-07-04 TD62476~479P ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Input Voltage Output Current "H" Level "L" Level "H" Level Output Voltage "L" Level "H" Level Input Current "L" Level Clamp Diode Reverse Current I CIN Clamp Diode Forward Voltage TD62476P Output Off TD62477P TD62478P Supply Current TD62479P TD62476P Output On TD62477P TD62478P TD62479P SYMBOL VIH VIL IOH VOL IIH IIL IR VF ICCH ICCL TEST CIR− CUIT 1 TEST CONDITION ― 1― 2 VCC = 4.5V, VIH = 2.0 V VIL = 0.8V, VOH = 35 V VCC = 4.5 V 3 VIH = 2.0 V VIL = 0.8 V IOUT = 100 mA IOUT = 200 mA IOUT = 300 mA 4 VCC = 5.5 V, VIN = 5.5 V 5 VCC = 5.5 V, VIN = 0.4 V 6 VCC = 4.5 V, VR = 35 V 7 VCC = 4.5 V, IF = 300 mA VIN = 5 V 5 VIN = 0 V VIN = 5 V VCC = 5.5 V VIN = 0 V VIN = 5 V 4 VIN = 0 V VIN = 5 V VIN = 0 V MIN 2.0 ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― TYP. MAX ―― ― 0.8 ― 10 0.15 0.28 0.45 ― −0.26 −0.52 ― 1.5 8.4 0.6 9 1.1 38 36 39 36 0.30 0.45 0.60 10 −0.4 −0.8 10 1.75 14 0.85 14 1.8 55 53 56 63 UNIT V µA V µA mA µA V mA SWITCHING CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Propagation Delay Time "H" Level "L" Level SYMBOL tpLH tpHL TEST CIR− CUIT CONDITION ― CL = 15 pF, RL = 120Ω ― MIN TYP. MAX UNIT ― 0.7 ― µs ― 0.2 ― 3 2001-07-04 TEST CIRCUIT 1. VIH, VIL 3. VOL 5. IIL, ICCH 2. IOH 4. IIH, ICCL 6. IR TD62476~479P 7. VF TEST CIRCUIT OF SWITCHING CHARACTERISTIC TEST WAVEFORM PRECAUTIONS for USING This IC does not integrate protection circuits such as overcurrent and overvoltage protectors. Thus, if excess current or voltage is applied to the IC, the IC may be damaged. Please design the IC so that excess current or voltage will not be applied to the IC. Utmost care is necessary in the design of the output line, VCC, COMMON and GND line since IC may be destroyed due to short−circuit between outputs, air contamination fault, or fault by improper grounding 4 2001-07-04 PACKAGE DIMENSIONS DIP8−P−300−2.54 TD62476~479P Unit: mm Weight: 0.45 g (Typ.) 5 2001-07-04 TD62476~479P RESTRICTIONS ON PRODUCT USE 000707EBA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Relia.


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