POWER MOS FET 4CH SINK DRIVER
TD62M4503AFN
TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI−CHIP
TD62M4503AFN
POWER MOS FET 4CH SINK DRIVER
TD62M4503...
Description
TD62M4503AFN
TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI−CHIP
TD62M4503AFN
POWER MOS FET 4CH SINK DRIVER
TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET (2SK1078) × 4 and Diodes (1SS184).
FEATURES
l 4V Drive l Low ON Resistance : RDS (ON) = 0.58 Ω (Typ.) l Low Leakage Current
: IGSS = ±3 µA (Max.) (VGS = ±16 V) : IGSS = 100 µA (Max.) (VGS = 60 V) l Enhancement Type : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) l Small Package : SSOP 24 (0.65 mm Pitch)
Weight: 0.14 g (Typ.)
BLOCK DIAGRAM
PIN CONNECTION (TOP VIEW)
1 2001-07-05
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain−Source Voltage
Drain−Gate Voltage (RGS = 20 kΩ) Gate−Source Voltage
Drain Current
DC Pulse
Diode Reverse Voltage
Diode Average Rectifier Current
Power Dissipation
― (Note 1)
Junction Temperature
Operating Temperature
Storage Temperature
VDSS VDGR VGSS
ID IDP VR IO
PD
Tj Topr Tstg
60 60 ±20 0.8 1.6 80 0.1 0.78 0.89 150 −40~85 −55~150
V V V A A V A W W °C °C °C
Note 1: On Glass Epoxy PCB (50 × 50 × 1.6 mm Cu 40%) This device is an electrostatic sensitivity device. Please handle with caurion.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC Gate Leakage Current Drain Cut−off Current Drain Source Braeakdown Voltage Gate Thresold Voltage Drain ON Current Drain−Source ON Resistance
Diode Forward Voltage
Diode Reverse Current
SYMBOL
IGSS IDSS V (BR) DSS Vth ID (ON)
RDS (ON)
VF (1) VF (2) VF (3) IR (1) IR (2)
TEST CIR− CUIT
TEST CONDIT...
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