TD62M4503AFN

TD62M4503AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI−CHIP TD62M4503AFN POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET (2SK1078) × 4 and Diodes (1SS184). FEATURES l 4V Drive l Low ON Resistance : RDS (ON) = 0.58 Ω (Typ.) l Low Leakage Current : IGSS = ±3 µA (Max.) (VGS = ±16 V) : IGSS = 100 µA (Max.) (VGS = 60 V) l Enhancement Type : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) l Small Package : SSOP 24 (0.65 mm Pitch) Weight: 0.14 g (Typ.) BLOCK DIAGRAM PIN CONNECTION (TOP VIEW) 1 2001-07-05 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain−Source Voltage Drain−Gate Voltage (RGS = 20 kΩ) Gate−Source Voltage Drain Current DC Pulse Diode Reverse Voltage Diode Average Rectifier Current Power Dissipation ― (Note 1) Junction Temperature Operating Temperature Storage Temperature VDSS VDGR VGSS ID IDP VR IO PD Tj Topr Tstg 60 60 ±20 0.8 1.6 80 0.1 0.78 0.89 150 −40~85 −55~150 V V V A A V A W W °C °C °C Note 1: On Glass Epoxy PCB (50 × 50 × 1.6 mm Cu 40%) This device is an electrostatic sensitivity device. Please handle with caurion. ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Gate Leakage Current Drain Cut−off Current Drain Source Braeakdown Voltage Gate Thresold Voltage Drain ON Current Drain−Source ON Resistance Diode Forward Voltage Diode Reverse Current SYMBOL IGSS IDSS V (BR) DSS Vth ID (ON) RDS (ON) VF (1) VF (2) VF (3) IR (1) IR (2) TEST CIR− CUIT TEST CONDIT...