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TD7623AFN Dataheets PDF



Part Number TD7623AFN
Manufacturers Toshiba
Logo Toshiba
Description 2.3 GHz DIRECT TWO MODULUS-TYPE FREQUENCY SYNTHESIZER
Datasheet TD7623AFN DatasheetTD7623AFN Datasheet (PDF)

TD7623AFN TENTATIVE TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD7623AFN 3-WIRE AND I2C BUS SYSTEM, 2.3 GHz DIRECT TWO MODULUS-TYPE FREQUENCY SYNTHESIZER FOR CATV The TD7623AFN can be combined with a micro CPU to create a highly functional frequency synthesizer. The control data conforms to 3-wire bus and standard I2C bus formats. BUS-SW can be used to easily switch for easy tuner system set-up. FEATURES l Direct two modulus-type frequency synthesizer l Standard I2C bus .

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TD7623AFN TENTATIVE TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD7623AFN 3-WIRE AND I2C BUS SYSTEM, 2.3 GHz DIRECT TWO MODULUS-TYPE FREQUENCY SYNTHESIZER FOR CATV The TD7623AFN can be combined with a micro CPU to create a highly functional frequency synthesizer. The control data conforms to 3-wire bus and standard I2C bus formats. BUS-SW can be used to easily switch for easy tuner system set-up. FEATURES l Direct two modulus-type frequency synthesizer l Standard I2C bus format control with built-in read mode l 3-wire bus 27-bit format control l 4-bit bandswitch drive transistor l 5-level A / D converter (when I2C bus selected) l Frequency step : 50 kHz, 62.5 kHz, 250 kHz, and 333.3 kHz (at 4 MHz X'tal used) l Phase lock detector l Various function settings via program data l Four address settings via address selector (when I2C bus selected) l Power on reset circuit l Flat, compact package : SSOP16 (0.65 mm pitch) l Power on reset operation condition Bandswitch register 1 to 4 : OFF Tuning amplifier : ON Tuning Voltage output (Vt) : High Level Charge-pump output current : ±200 µA Phase comparator reference frequency divider ratio : 1 / 80 Weight: 0.07 g (Typ.) Note: These devices are easy to be damaged by high static voltage or electric fields. In regards to this, please handle with care. To input sub features items. 000707EBA1 · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 2001-03-01 1/19 BLOCK DIAGRAM TD7623AFN MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage 1 Supply Voltage 2 Power Consumption Operating Temperature Storage Temperature VCC1 VCC2 PD Topr Tstg 6.0 12 560 −20~85 −55~150 V V mW °C °C Note 1: When using the device at above Ta = 25°C, decrease the power dissipation by 4.5 mW for each increase of 1°C. Note 2: These devices are easy to be damaged by high static voltage or electric fields. In regards to this, please handle with care. RECOMMENDED SUPPLY VOLTAGE PIN No. PIN NAME 3 VCC1 : PLL Power Supply 4 VCC2 : Band Switch Power Supply MIN 4.5 VCC1 TYP. 5.0 ― MAX 5.5 9.9 UNIT V V 2001-03-01 2/19 PIN INTERFACE TD7623AFN 2001-03-01 3/19 TD7623AFN ELECTRICAL CHARACTERISTICS (Unless otherwise specified, VCC1 = 5 V, VCC2 = 9 V, Ta = 25°C) CHARACTERISTIC Supply Voltage 1 Supply Current 1 Supply Voltage 2 Supply Current 2 Bandswitch Drive Current Bandswitch Drive Maximum LOAD Bandswitch Drive Voltage Drop SYMBOL VCC1 ICC1 VCC2 ICC2-1 ICC2-2 IBD IBDMAX VBD Sat TEST CIRCUIT ― TEST CONDITION ― MIN 4.5 1 Bandswitch : OFF Vt : OFF 24 ― ― VCC1 Bandswitch : 1 Band ON 1 IBD = 20 mA (LOAD) Bandswitch : 2 Band ON IBD = 30 mA (TOTAL LOAD) ― ― 3 Maximum Drive Current / 1 port ― 3 Maximum Total Drive Current ―.


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