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TDA7266S Dataheets PDF



Part Number TDA7266S
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description 5+5W DUAL BRIDGE AMPLIFIER
Datasheet TDA7266S DatasheetTDA7266S Datasheet (PDF)

® TDA7266S 5+5W DUAL BRIDGE AMPLIFIER WIDE SUPPLY VOLTAGE RANGE (3-18V) MINIMUM EXTERNAL COMPONENTS TECHNOLOGY BI20II – NO SWR CAPACITOR – NO BOOTSTRAP – NO BOUCHEROT CELLS )– INTERNALLY FIXED GAIN t(sSTAND-BY & MUTE FUNCTIONS SHORT CIRCUIT PROTECTION ucTHERMAL OVERLOAD PROTECTION te Prod ct(s)DESCRIPTION le duThe TDA7266S is a dual bridge amplifier specially so rodesigned for TV and Portable Radio applications. Multiwatt 15 ORDERING NUMBER: TDA7266S - Ob te PBLOCK AND APPLICATION DIAGRAM.

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® TDA7266S 5+5W DUAL BRIDGE AMPLIFIER WIDE SUPPLY VOLTAGE RANGE (3-18V) MINIMUM EXTERNAL COMPONENTS TECHNOLOGY BI20II – NO SWR CAPACITOR – NO BOOTSTRAP – NO BOUCHEROT CELLS )– INTERNALLY FIXED GAIN t(sSTAND-BY & MUTE FUNCTIONS SHORT CIRCUIT PROTECTION ucTHERMAL OVERLOAD PROTECTION te Prod ct(s)DESCRIPTION le duThe TDA7266S is a dual bridge amplifier specially so rodesigned for TV and Portable Radio applications. Multiwatt 15 ORDERING NUMBER: TDA7266S - Ob te PBLOCK AND APPLICATION DIAGRAM roduct(s) ) - Obsole0.22µF P t(sIN1 lete ducST-BY 4 7 VCC 3 13 470µF + 1 OUT1+ - 100nF Obso lete ProS-GND 9 Vref so 0.22µF Ob IN2 12 - 2 OUT1+ + 15 OUT2+ - MUTE 6 July 2002 PW-GND 8 - 14 OUT2+ D94AU175B 1/8 TDA7266S ABSOLUTE MAXIMUM RATINGS Symbol VS IO Ptot Top Tstg, Tj Parameter Supply Voltage Output Peak Current (internally limited) Total Power Dissipation (Tcase = 70°C) Operating Temperature Storage and Junction Temperature Value 20 1.5 25 0 to 70 -40 to +150 Unit V A W °C °C THERMAL DATA Symbol Description Value Unit Rth j-case Thermal Resistance Junction to case t(s)PIN CONNECTION (Top view) Typ. 1.6 Max. 2.2 °C/W uc15 OUT2+ d14 OUT2ro13 VCC te P t(s)12 IN2 11 N.C. c10 N.C. le du9 S-GND so ro8 PW-GND 7 ST-BY b P6 MUTE - O te5 N.C. ) le4 IN1 t(s o3 VCC s2 OUT1c b1 OUT1+ du - O D95AU261 Pro t(s)ELECTRICAL CHARACTERISTICS (VCC = 11V, RL = 8Ω, f = 1kHz, Tamb = 25°C unless otherwise te cspecified.) le duSymbol o roVCC s PIq Ob teVOS lePO THD Parameter Supply Range Total Quiescent Current Output Offset Voltage Output Power Total Harmonic Distortion ObsoSVR Supply Voltage Rejection Test Condition THD = 10% PO = 1W PO = 0.1W to 2W f = 100Hz to 15kHz f = 100Hz VR = 0.5V Min. 3 4.5 40 Typ. 11 50 5 0.05 56 Max. 18 60 120 0.2 1 Unit V mA mV W % % dB CT Crosstalk 46 60 dB AMUTE TW GV ∆Gv Mute Attenuation Thermal Threshold Closed Loop Voltage Gain Voltage Gain Matching 60 80 dB 150 °C 25 26 27 dB 0.5 dB Ri VTMUTE Input Resistance Mute Threshold for VCC > 6.4V; VO = -30dB for VCC < 6.4V; VO = -30dB 25 2.3 VCC/2 -1 30 2.9 VCC/2 -0.75 4.1 VCC/2 -0.5 KΩ V V 2/8 ELECTRICAL CHARACTERISTICS (Continued) Symbol VTST-BY IST-BY eN Parameter St-by Threshold ST-BY current V6 = GND Total Output Noise Voltage Test Condition A curve f = 20Hz to 20kHz TDA7266S Min. 0.8 Typ. 1.3 150 Max. 1.8 100 Unit V µA µV APPLICATION SUGGESTION the amplifier, this to avoid "POP" and "CLICK" on the outputs. STAND-BY AND MUTE FUNCTIONS When this voltage reaches the St-by threshold (A) Microprocessor Application In order to avoid annoying "Pop-Noise" during )Turn-On/Off transients, it is necessary to guarant(stee the right St-by and mute signals sequence. It is quite simple to obtain this function using a mi- ccroprocessor (Fig. 1 and 2). duAt first St-by signal (from mP) goes high and the rovoltage across the St-by terminal (Pin 7) starts to )increase exponentially. The external RC network te P t(sis intended to turn-on slowly the biasing circuits of cFigure 1: Microprocessor Application level, the amplifier is switched-on and the external capacitors in series to the input terminals (C3, C5) start to charge. It’s necessary to mantain the mute signal low until the capacitors are fully charged, this to avoid that the device goes in play mode causing a loud "Pop Noise" on the speakers. A delay of 100-200ms between St-by and mute signals is suitable for a proper operation. - Obsole te ProduC1 0.22µF ) leIN1 ct(s bsoST-BY R1 10K du - OC2 ro )10µF 4 7 VCC 3 13 C5 470µF + 1 OUT1+ - C6 100nF te P uct(sµP S-GND 9 bsole ProdC3 0.22µF O te IN2 Vref 12 ole MUTE R2 10K Obs C4 6 - 2 OUT1+ + 15 OUT2+ - 1µF PW-GND 8 - 14 OUT2+ D95AU258A 3/8 TDA7266S Figure 2: Microprocessor Driving Signals. +VS(V) +18 VIN (mV) )VST-BY pin 7 t(s1.8 c1.3 du0.8 te Pro t(s)VMUTE pin 6 le uc4.1 so rod2.9 b P2.3 ct(s) - O bsoleteIq u O(mA) lete Prodduct(s) -VOUT Obso lete Pro(V) OFF ST-BY MUTE PLAY MUTE ST-BY OFF D96AU259 bso(B) Low Cost Application OIn low cost applications where the mP is not pre- external voltage divider. The device is switched-on/off from the supply line sent, the suggested circuit is shown in fig.3. and the external capacitor C4 is intended to delay the St-by and mute threshold exceeding, avoiding The St-by and mute terminals are tied together "Popping" problems. and they are connected to the supply line via an 4/8 Figure 3a: Stand-alone Low-cost Application. TDA7266S VCC Vs R1 47K C3 0.22µF IN1 ST-BY 4 7 3 13 C1 470µF C2 100nF + 1 OUT1+ - R2 C4 47K 10µF t(s)S-GND 9 ducC5 0.22µF ro )IN2 Vref 12 lete P uct(sMUTE d6 - 2 OUT1+ + 15 OUT2+ - ) - Obso lete ProPW-GND ct(s bso8 - 14 OUT2+ D95AU260B OObbssooleletetePProrodduuct(s) - OFigure 3b: PCB and Component Layout of the Application Circuit (Fig. 1). 5/8 TDA7266S Figure 4: Distortion vs Frequency Figure 5: Gain vs Frequency T H D (% ) 10 1 V cc = 11 V Rl = 8 ohm Level(dBr) 5.0000 4.0000 3.0.


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