AM29LV010B

ADVANCE INFORMATION Am29LV010B 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS s Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors s Manufactured on 0.35 µm process technology s High performance — Full voltage range: access times as fast as 55 ns — Regulated voltage range: access times as fast as 45 ns s Ultra low power consumption (typical values at 5 MHz) — 200 nA Automatic Sleep mode current — 200 nA standby mode current — 7 mA read current — 15 mA program/erase current s Flexible sector architecture — Eight 16 Kbyte — Supports full chip erase — Sector Protection features: Hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked in-system or via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors s Unlock Bypass Mode Program Command — Reduces overall programming time when issuing multiple program command sequences s Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies data at specified addresses s Minimum 1,000,000 write cycle guarantee per secto...