AM29LV081B

ADVANCE INFORMATION Am29LV081B 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s Optimized architecture for Miniature Card and mass storage applications s Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors s Manufactured on 0.35 µm process technology — Compatible with 0.5 µm Am29LV081 device s High performance — Full voltage range: access times as fast as 80 ns — Regulated voltage range: access times as fast as 70 ns s Ultra low power consumption (typical values at 5 MHz) — 200 nA Automatic Sleep mode current — 200 nA standby mode current — 7 mA read current — 15 mA program/erase current s Flexible sector architecture — Sixteen 64 Kbyte sectors — Supports full chip erase — Sector Protection features: A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked in-system or via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors s Unlock Bypass Program Command — Reduces overall programming time when issuing multiple program command sequences s Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algo...