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AM29LV116D Dataheets PDF



Part Number AM29LV116D
Manufacturers AMD
Logo AMD
Description 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Datasheet AM29LV116D DatasheetAM29LV116D Datasheet (PDF)

Am29LV116D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu. Continuity of Specifications There is no change to this datasheet as a result of offering the device as a Spansion product. Any changes that have been made are the resu.

  AM29LV116D   AM29LV116D



Document
Am29LV116D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu. Continuity of Specifications There is no change to this datasheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal datasheet improvement and are noted in the document revision summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a revision summary. Continuity of Ordering Part Numbers AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order these products, please use only the Ordering Part Numbers listed in this document. For More Information Please contact your local AMD or Fujitsu sales office for additional information about Spansion memory solutions. Publication Number 21359 Revision E Amendment +1 Issue Date November 7, 2000 Am29LV116D 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS s Single power supply operation — 2.7 to 3.6 volt read and write operations for battery-powered applications s Manufactured on 0.23 µm process technology — Compatible with and replaces Am29LV116B device s High performance — Access times as fast as 70 ns s Ultra low power consumption (typical values at 5 MHz) — 200 nA Automatic Sleep mode current — 200 nA standby mode current — 9 mA read current — 15 mA program/erase current s Flexible sector architecture — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte sectors — Supports full chip erase — Sector Protection features: A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked in-system or via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors s Unlock Bypass Program Command — Reduces overall programming time when issuing multiple program command sequences s Top or bottom boot block configurations available s Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies data at specified addresses s Minimum 1,000,000 write cycle guarantee per sector This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. s 20-year data retention at 125°C — Reliable operation for the life of the system s Package option — 40-pin TSOP s CFI (Common Flash Interface) compliant — Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices s Compatibility with JEDEC standards — Pinout and software compatible with singlepower supply Flash — Superior inadvertent write protection s Data# Polling and toggle bits — Provides a software method of detecting program or erase operation completion s Ready/Busy# pin (RY/BY#) — Provides a hardware method of detecting program or erase cycle completion s Erase Suspend/Erase Resume — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation s Hardware reset pin (RESET#) — Hardware method to reset the device to reading array data Publication# 21359 Rev: E Amendment/+1 Issue Date: November 7, 2000 GENERAL DESCRIPTION The Am29LV116D is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes. The device is offered in a 40-pin TSOP package. The byte-wide (x8) data appears on DQ7–DQ0. All read, program, and erase operations are accomplished using only a single power supply. The device can also be programmed in standard EPROM programmers. The standard device offers access times of 70, 90, and 120 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices..


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