N-Channel MOSFET
D
P-Pack
G S
APL501P
500V 43.0A 0.12W HERMETIC PACKAGE
POWER MOS IV ®
MAXIMUM RATINGS
Symbol VDSS ID IDM, lLM VGS PD...
Description
D
P-Pack
G S
APL501P
500V 43.0A 0.12W HERMETIC PACKAGE
POWER MOS IV ®
MAXIMUM RATINGS
Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
1
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: TC = 25°C unless otherwise specified.
APL501P UNIT Volts Amps
500 43 172 ±30 520 4.16 -55 to 150
and Inductive Current Clamped
Volts Watts W/°C °C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
500 43 0.12 25
(VDS > I D(ON) x R DS(ON) Max, VGS = 8V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID [Cont.])
Ohms µA
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
250 ±100 2 4
nA Volts
THERMAL CHARACTERISTICS
Symbol RQJC RQCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.) MIN TYP MAX UNIT °C/W
0.24 0.06
8-2001 050-5898 Rev -
CAUTION: These Devices are Sensitive to...
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