APM3023N

APM3023N N-Channel Enhancement Mode MOSFET Features 30V/30A, RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=5V Super High Dense Cell Design Pin Description 1 2 3 1 2 3 High Power and Current Handling Capability TO-252.TO-220 and SOT-223 Packages G D S G D S Top View of TO-252 Top View of SOT-223 Applications Switching Regulators Switching Converters 3 2 1 S D G TO-220 Package Ordering and Marking Information A P M 3 023 N H a n d lin g C o d e Tem p. R ange Package C ode Package C ode U : T O -2 5 2 V : S O T -2 2 3 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TR : Tape & R eel F : T O -2 2 0 A P M 3 0 2 3 N U /F : : AP M 3023N XXXXX XXXXX - D a te C o d e AP M 3023N V : AP M 3023N XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 30 ±20 30 70 Unit V A Maximum Drain Current – Continuous Maximum Drain Current – Pulsed * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.6 - July., 2003 1 www.anpec.com.tw APM3023N Absolute Maximum Ratings (Cont.) Symbol Parameter TO-252/TO-220 TA=25°C PD Maximum Power Dissipation TA=100°...