MOSFET
APT10026L2LL
1000V 38A 0.260W
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enha...
Description
APT10026L2LL
1000V 38A 0.260W
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
TO-264 Max
Increased Power Dissipation Easier To Drive Popular TO-264 MAX Package
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT10026L2LL UNIT Volts Amps
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L A C I N H C N E T IO E T C MA N A OR V AD INF
38 152 ±30 ±40 890 7.12 300 38 50
(Repetitive and Non-Repetitive)
1 4
1000
Volts Watts W/°C °C Amps mJ
-55 to 150
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
...
Similar Datasheet
- APT10026L2FLL MOSFET - Advanced Power Technology
- APT10026L2LL MOSFET - Advanced Power Technology