MOSFET
APT10050B2VFR APT10050LVFR
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode pow...
Description
APT10050B2VFR APT10050LVFR
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
B2VR
1000V 21A 0.500W
T-MAX™
TO-264
LVR
Identical Specifications: T-MAX™ or TO-264 Package Faster Switching Lower Leakage
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
D G S
100% Avalanche Tested
All Ratings: TC = 25°C unless otherwise specified.
APT10050 UNIT Volts Amps
1000 21 84 ±30 ±40 520 4.16 -55 to 150 300 21 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
1000 21 0.500 250 1000 ±100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Con...
Similar Datasheet
- APT10050B2VFR MOSFET - Advanced Power Technology
- APT10050B2VR MOSFET - Advanced Power Technology