The Fast IGBT is a new generation of high voltage power IGBTs.
APT100GF60JRD
600V 140A
E C
Fast IGBT & FRED
The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonP...
Description
APT100GF60JRD
600V 140A
E C
Fast IGBT & FRED
The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.
E G
SO
ISOTOP ®
2 T-
27
"UL Recognized"
Low Forward Voltage Drop High Freq. Switching to 20KHz Low Tail Current Ultra Low Leakage Current RBSOA and SCSOA Rated Ultrafast Soft Recovery Antiparallel Diode
MAXIMUM RATINGS (IGBT)
Symbol VCES VCGR VGE I C1 I C2 I CM1 I CM2 PD TJ,TSTG TL Parameter Collector-Emitter Voltage
C
G E
APT100GF60JRD UNIT
All Ratings: TC = 25°C unless otherwise specified.
600
RY A IN
MIN
Collector-Gate Voltage (RGE = 20KΩ) Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 90°C Pulsed Collector Current Pulsed Collector Current Total Power Dissipation
1 1
600 ±20 140 100 280 200 390 -55 to 150 300
Watts °C Amps Volts
@ TC = 25°C @ TC = 90°C
Operating and Storage Junction Temperature Range
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.8mA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) Collector C...
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