APT10M25BVR

APT10M25BVR 100V 75A 0.025Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. TO-247 Faster Switching 100% Avalanche Tested D Lower Leakage Popular TO-247 Package G MAXIMUM RATINGS S All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C 5 Pulsed Drain Current 1 5 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 5 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT10M25BVR 100 75 300 ±30 ±40 300 2.4 -55 to 150 300 75 30 1500 UNIT Volts Amps Volts Watts W/°C °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 100 ID(on) On State Drain Current 2 5 (VDS > ID(on) x RDS(on) Max, VGS = 10V) 75 RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) IDSS Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8...