Power MOSFET
APT1201R4BLL APT1201R4SLL
1200V 9A 1.400W
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-...
Description
APT1201R4BLL APT1201R4SLL
1200V 9A 1.400W
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
BLL D3PAK
TO-247
SLL
Increased Power Dissipation Easier To Drive TO-247 or Surface Mount D3PAK Package
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT1201R4 UNIT Volts Amps
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L A C I N H C N E T O I E T C MA N A OR V AD INF
1200 9 36 ±30 ±40 300 2.4 300 12 30
(Repetitive and Non-Repetitive)
1 4
Volts Watts W/°C °C Amps mJ
-55 to 150
1210
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250...
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