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APT12GT60BR

Advanced Power Technology

high voltage power IGBT

APT12GT60BR 600V 25A Thunderbolt IGBT™ TO-247 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. U...


Advanced Power Technology

APT12GT60BR

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APT12GT60BR 600V 25A Thunderbolt IGBT™ TO-247 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. Low Forward Voltage Drop Low Tail Current Avalanche Rated MAXIMUM RATINGS Symbol VCES VCGR VEC VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage High Freq. Switching to 150KHz Ultra Low Leakage Current RBSOA and SCSOA Rated G C E C G E All Ratings: TC = 25°C unless otherwise specified. APT12GT60BR UNIT 600 RY A IN MIN Collector-Gate Voltage (RGE = 20KΩ) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 115°C Pulsed Collector Current Pulsed Collector Current 1 1 600 15 ±20 25 12 50 24 18 125 -55 to 150 300 Volts @ TC = 25°C @ TC = 115°C 2 Amps M Single Pulse Avalanche Energy Total Power Dissipation mJ Watts °C Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Symbol BVCES RBVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.4mA, Tj = -55°C) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 350µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150°C) Collect...




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