N-Channel MOSFET
APT20M16B2LL APT20M16LLL
200V 100A 0.016W
B2LL
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltag...
Description
APT20M16B2LL APT20M16LLL
200V 100A 0.016W
B2LL
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
T-MAX™
TO-264
LLL
Increased Power Dissipation Easier To Drive Popular T-MAX™ or TO-264 Package
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT20M16 UNIT Volts Amps
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1 5
Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L A C I N H C N E T IO E T C MA N A OR V AD INF
5
200 100 400
±30 ±40 690
Volts Watts W/°C °C Amps mJ
5.52 300 100 50
-55 to 150
(Repetitive and Non-Repetitive)
1
4
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ...
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