N-Channel MOSFET
APT20M20B2FLL APT20M20LFLL
200V 100A 0.020Ω
POWER MOS 7 R FREDFFERETDFET
Power MOS 7® is a new generation of low loss,...
Description
APT20M20B2FLL APT20M20LFLL
200V 100A 0.020Ω
POWER MOS 7 R FREDFFERETDFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed and Qg. Power MOS
with Power MOS 7® by significantly lowering 7® combines lower conduction and switching
RDS(ON) losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
T-MAX™
TO-264
Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg
Increased Power Dissipation Easier To Drive Popular T-MAX™ or TO-264 Package FAST RECOVERY BODY DIODE
D G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT20M20B2FLL_LFLL UNIT
VDSS ID IDM VGS
VGSM
Drain-Source Voltage Continuous Drain Current @ TC = 25°C 5 Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient
200
Volts
100 Amps
400
±30 Volts
±40
PD
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
568 4.55
Watts W/°C
TJ,TSTG TL IAR EAR EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
-55 to 150 300 100 50 2500
°C Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
...
Similar Datasheet