Document
APT20M22JVR
200V 97A 0.022Ω
S G D S
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
SO
ISOTOP ®
2 T-
27
"UL Recognized"
• Faster Switching • Lower Leakage
• 100% Avalanche Tested • Popular SOT-227 Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT20M22JVR UNIT Volts Amps
200 97 388 ±30 ±40 450 3.6 -55 to 150 300 97 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
200 97 0.022 25 250 ±100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA nA Volts
050-5557 Rev C
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
APT Website - http://www.advancedpower.com
Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT20M22JVR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V ID = ID[Cont.] @ 25°C VGS = 15V ID = ID[Cont.] @ 25°C RG = 0.6Ω VDD = 0.5 VDSS VDD = 0.5 VDSS MIN TYP MAX UNIT
8500 1950 560 290 66 120 16 25 48 5
10200 2730 840 435 100 180 32 50 72 10
ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns µC
97 388 1.3 330 5.8
(Body Diode) (VGS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/ µs) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/ µs)
THERMAL / PACKAGE CHARACTERISTICS
Symbol RθJC RθJA VIsolation Torque Characteristic Junction to Case Junction to Ambient RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Maximum Torque for Device Mounting Screws and Electrical Terminations. MIN TYP MAX UNIT °C/W Volts
0.28 40 2500 13
lb•in
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 531µH, R = 25Ω, Peak I = 97A j G L
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3 Z JC, THERMAL IMPEDANCE (°C/W) θ D=0.5 0.1 0.2 0.05 0.1 0.05
PDM
0.01 0.005
Note: 0.02 0.01 SINGLE PULSE
t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC t1
050-5557 Rev C
0.001 10-5
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
APT20M22JVR
200 ID, DRAIN CURRENT (AMPERES) VGS=7V, 8V, 10V & 15V 6.5V 160 6V 120 5.5V 80 5V 40 4.5V 4V 0 20 40 60 80 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 200 ID, DRAIN CURRENT (AMPERES) TJ = -55°C TJ = +25°C TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE
200 VGS=15V ID, DRAIN CURRENT (AMPERES) 160
10V 8V 7V 6.5V 6V 5.5V
120
80 5V 40 4.5V 4V 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 1.4
V
GS
0
0
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
160
1.3
1.2 1.1 1.0 0.9 0.8 VGS=10V
120
80 TJ = +125°C TJ = +25°C TJ = -55°C
VGS=20V
40
0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 100 ID, DRAIN CURRENT (AMPERES)
0
0
50 100 150 200 250 300 ID, DRAIN CURRENT (AMPERES) FIGURE 5,.