APT20M22LVFR

APT20M22LVFR 200V 100A 0.022Ω POWER MOS V ® FREDFET TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode Lower Leakage Faster Switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage 100% Avalanche Tested Popular TO-264 Package G FREDFET D S All Ratings: TC = 25°C unless otherwise specified. APT20M22LVR UNIT Volts Amps 200 5 Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 5 100 400 ±30 ±40 520 4.16 -55 to 150 300 100 50 2500 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 5 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 4 Repetitive Avalanche Energy Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 5 MIN TYP MAX UNIT Volts Amps 200 100 0.022 250 1000 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont...