N-Channel MOSFET
APT20M45SVFR
200V 56A 0.045Ω
POWER MOS V ®
V®
FREDFET
D3PAK
Power MOS is a new generation of high voltage N-Channel e...
Description
APT20M45SVFR
200V 56A 0.045Ω
POWER MOS V ®
V®
FREDFET
D3PAK
Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
Fast Recovery Body Diode Lower Leakage Faster Switching
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
100% Avalanche Tested
FREDFET
D G S
Surface Mount D3PAK Package
All Ratings: TC = 25°C unless otherwise specified.
APT20M45SVFR UNIT Volts Amps
200 56 224 ±30 ±40 300 2.4 -55 to 150 300 56 30
4 1
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
200 56 0.045 250 1000 ±100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohm...
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