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APT30GT60BR Dataheets PDF



Part Number APT30GT60BR
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description high voltage power IGBT
Datasheet APT30GT60BR DatasheetAPT30GT60BR Datasheet (PDF)

APT30GT60BR 600V 58A Thunderbolt IGBT™ TO-247 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • Low Tail Current • Avalanche Rated MAXIMUM RATINGS Symbol VCES VCGR VEC VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage • High Freq. Switching to 150KHz • Ultra Low Leakage Current • RBSOA and SCSOA Rate.

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APT30GT60BR 600V 58A Thunderbolt IGBT™ TO-247 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • Low Tail Current • Avalanche Rated MAXIMUM RATINGS Symbol VCES VCGR VEC VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage • High Freq. Switching to 150KHz • Ultra Low Leakage Current • RBSOA and SCSOA Rated G C E C G E All Ratings: TC = 25°C unless otherwise specified. APT30GT60BR UNIT 600 RY A IN MIN Collector-Gate Voltage (RGE = 20KΩ) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 105°C Pulsed Collector Current Pulsed Collector Current 1 1 600 15 ±20 58 30 110 60 65 250 -55 to 150 300 Volts @ TC = 25°C @ TC = 105°C 2 Amps M Single Pulse Avalanche Energy Total Power Dissipation mJ Watts °C Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Symbol BVCES RBVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA, Tj = -55°C) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150°C) Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V) PR STATIC ELECTRICAL CHARACTERISTICS EL I TYP MAX UNIT 600 -15 3 1.6 4 2.0 5 2.5 2.8 40 1000 ±100 µA nA 052-6211 Rev B Volts I CES I GES CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street APT Website - http://www.advancedpower.com Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT30GT60BR Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES Resistive Switching (25°C) VGE = 15V I C = I C2 VCC = 0.8VCES RG = 10Ω I C = I C2 MIN TYP MAX UNIT 1600 155 90 140 60 12 14 55 190 140 18 30 300 25 0.5 1.2 1.70 mJ ns ns nC pF Gate-Emitter Charge Gate-Collector ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time IM EL Inductive Switching (150°C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10Ω TJ = +150°C Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time PR Inductive Switching (25°C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10Ω TJ = +25°C VCE = 20V, I C = I C2 IN A RY 6 MIN 18 30 260 20 1.30 mJ S ns Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance THERMAL CHARACTERISTICS Symbol RΘJC RΘJA Torque 1 2 3 Characteristic Junction to Case Junction to Ambient Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw TYP MAX UNIT °C/W lb•in 0.5 40 10 Repetitive Rating: Pulse width limited by maximum junction temperature. IC = IC2, VCC = 50V, RGE = 25Ω, L = 100µH, Tj = 25°C See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 052-6211 Rev B .


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