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APT30GT60BRD

Advanced Power Technology

high voltage power IGBT

APT30GT60BRD 600V 55A Thunderbolt IGBT™ & FRED The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. U...


Advanced Power Technology

APT30GT60BRD

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Description
APT30GT60BRD 600V 55A Thunderbolt IGBT™ & FRED The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and ultrafast switching speed. TO-247 Low Forward Voltage Drop High Freq. Switching to 150KHz Low Tail Current Ultra Low Leakage Current RBSOA and SCSOA Rated Ultrafast Soft Recovery Antiparallel Diode MAXIMUM RATINGS (IGBT) Symbol VCES VCGR VGE I C1 I C2 I CM1 I CM2 PD TJ,TSTG TL Parameter G C E C G E APT30GT60BRD UNIT All Ratings: TC = 25°C unless otherwise specified. Collector-Gate Voltage (RGE = 20KΩ) Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current Pulsed Collector Current Total Power Dissipation 1 1 RY A IN MIN Collector-Emitter Voltage 600 600 ±20 55 30 110 60 200 -55 to 150 300 Watts °C Amps Volts @ TC = 25°C @ TC = 110°C Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS (IGBT) Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150°C) Collector Cut-of...




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