high voltage power IGBT
APT30GT60BRD
600V 55A
Thunderbolt IGBT™ & FRED
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. U...
Description
APT30GT60BRD
600V 55A
Thunderbolt IGBT™ & FRED
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and ultrafast switching speed.
TO-247
Low Forward Voltage Drop High Freq. Switching to 150KHz Low Tail Current Ultra Low Leakage Current RBSOA and SCSOA Rated Ultrafast Soft Recovery Antiparallel Diode
MAXIMUM RATINGS (IGBT)
Symbol VCES VCGR VGE I C1 I C2 I CM1 I CM2 PD TJ,TSTG TL Parameter
G
C
E
C
G E
APT30GT60BRD UNIT
All Ratings: TC = 25°C unless otherwise specified.
Collector-Gate Voltage (RGE = 20KΩ) Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current Pulsed Collector Current Total Power Dissipation
1 1
RY A IN
MIN
Collector-Emitter Voltage
600 600 ±20 55 30 110 60 200 -55 to 150 300
Watts °C Amps Volts
@ TC = 25°C @ TC = 110°C
Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150°C) Collector Cut-of...
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