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APT30GT60CR

Advanced Power Technology

high voltage power IGBT

APT30GT60CR 600V 30A Thunderbolt IGBT™ The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non...


Advanced Power Technology

APT30GT60CR

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Description
APT30GT60CR 600V 30A Thunderbolt IGBT™ The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. TO-254 TO-254 Low Forward Voltage Drop Low Tail Current Avalanche Rated Hermetic Package MAXIMUM RATINGS Symbol VCES VCGR VEC VGE I C1 I C2 I CM I LM EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage High Freq. Switching to 150KHz Ultra Low Leakage Current RBSOA and SCSOA Rated C E G C G E All Ratings: TC = 25°C unless otherwise specified. APT30GT60CR UNIT Collector-Gate Voltage (RGE = 20KW) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current @ TC = 60°C Pulsed Collector Current 1 RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C Single Pulse Avalanche Energy Total Power Dissipation 2 Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Y R A N I M I L E R P 600 600 15 ±20 30 30 4 Volts @ TC = 25°C @ TC = 25°C 110 60 65 Amps mJ Watts °C 100 -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES RBVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA, Tj = -55°C) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) MIN TYP MAX UNIT 600 -15 3 1.6 4 2.0 5 2.5 2.8 40 ...




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