APT33GF120HR

APT33GF120HR 1200V 38A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. TO-258 Low Forward Voltage Drop Low Tail Current Avalanche Rated Hermetic Package MAXIMUM RATINGS Symbol V CES VCGR VGE I C1 I C2 I CM I LM EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage High Freq. Switching to 20KHz Ultra Low Leakage Current RBSOA and SCSOA Rated C E G C G E All Ratings: TC = 25°C unless otherwise specified. APT33GF120HR UNIT Collector-Gate Voltage (RGE = 20KW) Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 90°C Pulsed Collector Current 1 RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C Single Pulse Avalanche Energy Total Power Dissipation 2 Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Y R A N I M I L E R P 1200 1200 ±20 38 33 76 66 65 @ TC = 25°C Volts Amps mJ Watts °C 205 -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.8mA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) MIN TYP MAX UNIT 1200 4.5 5.5 2.7 3.3 6.5 3.2 3.9 0.8 5.0 6-2000 050-5974 Rev - Volts Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C) Collector-Emitter On...