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APT4020BVR Dataheets PDF



Part Number APT4020BVR
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description Power MOSFET
Datasheet APT4020BVR DatasheetAPT4020BVR Datasheet (PDF)

APT4020BVR 400V 23A 0.200Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. TO-247 • Faster Switching • Lower Leakage • 100% Avalanche Tested • Popular TO-247 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter.

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APT4020BVR 400V 23A 0.200Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. TO-247 • Faster Switching • Lower Leakage • 100% Avalanche Tested • Popular TO-247 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT4020BVR UNIT Volts Amps 400 23 92 ±30 ±40 250 2 -55 to 150 300 23 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 960 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 400 23 0.20 25 250 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms µA nA Volts 050-5626 Rev A Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) APT Website - http://www.advancedpower.com Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT4020BVR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V ID = ID[Cont.] @ 25°C VGS = 15V ID = ID[Cont.] @ 25°C RG = 1.6Ω VDD = 0.5 VDSS VDD = 0.5 VDSS MIN TYP MAX UNIT 2650 400 180 120 16 60 10 11 38 7 3180 560 270 180 24 90 20 22 60 14 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 MIN TYP MAX UNIT Amps Volts ns µC 23 92 1.3 360 6 (Body Diode) (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/ µs) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/ µs) THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.50 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 3.63mH, R = 25Ω, Peak I = 23A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 D=0.5 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.2 0.1 0.05 0.1 0.05 0.02 0.01 0.005 0.01 SINGLE PULSE Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 050-5626 Rev A 0.001 10-5 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 APT4020BVR 50 VGS=7V, 10V & 15V ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 40 6.5V 40 50 VGS=15V VGS=10V 7V 6.5V 30 6V 30 6V 20 5.5V 20 5.5V 10 5V 4.5V 10 5V 4.5V 0 40 80 120 160 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 50 ID, DRAIN CURRENT (AMPERES) TJ = -55°C TJ = +25°C TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 0 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 1.4 V GS 0 NORMALIZED TO = 10V @ 0.5 I [Cont.] D 40 1.3 30 1.2 VGS=10V 20 1.1 10 TJ = +125°C TJ = +25°C TJ = -55°C 1.0 VGS=20V 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 25 ID, DRAIN CURRENT (AMPERES) 0 0.9 0 10 20 30 40 50 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 20 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 25 I = 0.5 I [Cont.] D D 1.15 1.10 15 1.05 10 1.00 5 0.95 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTAN.


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