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APT40GF120JRD Dataheets PDF



Part Number APT40GF120JRD
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description The Fast IGBT is a new generation of high voltage power IGBTs
Datasheet APT40GF120JRD DatasheetAPT40GF120JRD Datasheet (PDF)

APT40GF120JRD 1200V 60A E C Fast IGBT & FRED The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. E G SO ISOTOP ® 2 T- 27 "UL Recognized" • Low Forward Voltage Drop • High Freq. Switching to 20KHz • Low Tail Current • Ultra Low Leakage Current • RBSOA and SCSOA Rated • Ultrafast Soft Recovery Antiparall.

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APT40GF120JRD 1200V 60A E C Fast IGBT & FRED The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. E G SO ISOTOP ® 2 T- 27 "UL Recognized" • Low Forward Voltage Drop • High Freq. Switching to 20KHz • Low Tail Current • Ultra Low Leakage Current • RBSOA and SCSOA Rated • Ultrafast Soft Recovery Antiparallel Diode MAXIMUM RATINGS (IGBT) Symbol VCES VCGR VGE I C1 I C2 I CM1 I CM2 PD TJ,TSTG TL Parameter Collector-Emitter Voltage C G E APT40GF120JRD UNIT All Ratings: TC = 25°C unless otherwise specified. 1200 RY A IN MIN Collector-Gate Voltage (RGE = 20KΩ) Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 90°C Pulsed Collector Current Pulsed Collector Current Total Power Dissipation 1 1 1200 ±20 60 40 120 80 390 -55 to 150 300 Watts °C Amps Volts @ TC = 25°C @ TC = 90°C Operating and Storage Junction Temperature Range STATIC ELECTRICAL CHARACTERISTICS (IGBT) Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.8mA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V) 2 2 PR EL I Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. M TYP MAX UNIT 1200 4.5 5.5 2.9 3.5 6.5 3.4 4.1 0.8 TBD ±100 mA nA 052-6256 Rev A Volts I CES I GES CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street APT Website - http://www.advancedpower.com Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord DYNAMIC CHARACTERISTICS (IGBT) Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT40GF120JRD Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES Resistive Switching (25°C) VGE = 15V I C = I C2 VCC = 0.8VCES RG = 5Ω I C = I C2 MIN TYP MAX UNIT 3500 490 230 320 30 200 35 130 215 145 35 90 400 140 4.5 5.0 9.5 4700 700 345 pF Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time nC RY 6 MIN ns IM Inductive Switching (150°C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 5Ω TJ = +150°C IN A ns Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time 4 EL 4 mJ PR Inductive Switching (25°C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 5Ω 35 100 340 105 8.0 mJ S ns Turn-off Delay Time Fall Time Total Switching Losses 4 TJ = +25°C VCE = 20V, I C = I C2 Forward Transconductance THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED) Symbol RΘJC RΘJA WT Characteristic Junction to Case (IGBT) Junction to Case (FRED) Junction to Ambient TYP MAX UNIT 0.32 0.66 20 1.03 oz gm °C/W Package Weight 29.2 10 lb•in N•m Torque 1 Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine) 1.1 052-6256 Rev A Repetitive Rating: Pulse width limited by maximum junction temperature. Leakages include the FRED and IGBT. See MIL-STD-750 Method 3471 Switching losses include the FRED and IGBT. APT Reserves the right to change, without notice, the specifications and information contained herein. 2 3 4 APT40GF120JRD ULTRAFAST SOFT RECOVERY PARALLEL DIODE MAXIMUM RATINGS (FRED) Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (TC = 60°C, Duty Cycle = 0.5) All Ratings: TC = 25°C unless otherwise specified. APT40GF120JRD UNIT 1200 Volts 60 100 540 Amps Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3mS) STATIC ELECTRICAL CHARACTERISTICS (FRED) Symbol Characteristic / Test Conditions IN A RY MIN MIN TJ = 25°C TJ = 100°C TJ = 25°C TJ = 100°C TJ = 25°C TJ = 100°C TJ = 25°C TJ = 100°C TJ = 25°C TJ = 100°C TJ = 25°C TJ = 100°C RMS Forward Current TYP MAX UNIT IM IF = 60A IF = 120A IF = 60A, TJ = 150°C 2.5 2.0 2.0 Volts VF Maximum Forward Voltage DYNAMIC CHARACTERISTICS (FRED) Symbol trr1 trr2 trr3 tfr1 tfr2 IRRM1 IRRM2 Qrr1 Qrr2 Vfr1 Vfr2 diM/dt Characteristic TYP MAX UNIT Reverse Recovery Time, IF = 1.0A, diF /dt = -15A.


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