APT40M35PVR

APT40M35PVR 400V 89A 0.035Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. P-Pack Faster Switching Lower Leakage 100% Avalanche Tested New High Power P-Pack Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage All Ratings: TC = 25°C unless otherwise specified. APT40M35PVR UNIT Volts Amps 400 1 RY A IN IM MIN Continuous Drain Current @ TC = 25°C Pulsed Drain Current 89 356 ±30 ±40 625 5.0 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Volts Watts W/°C °C Amps mJ Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 -55 to 150 300 89 50 3600 (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions TYP MAX UNIT Volts Amps Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current 2 PR EL 4 400 89 0.035 100 500 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms µA nA Volts 050-5835 R...