Document
APT5010B2FLL APT5010LFLL
500V 46A 0.100Ω
POWER MOS 7 R FREDFET
B2FLL
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed and Qg. Power MOS
with Power MOS 7® by significantly lowering 7® combines lower conduction and switching
RDS(ON) losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
• Lower Gate Charge, Qg
• Popular T-MAX™ or TO-264 Package
• FAST RECOVERY BODY DIODE
T-MAX™
TO-264
LFLL
D G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT5010B2FLL_LFLL UNIT
VDSS ID IDM
VGS VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1
Gate-Source Voltage Continuous Gate-Source Voltage Transient
500 Volts
46 Amps
184
±30 Volts ±40
PD
Total Power Dissipation @ TC = 25°C Linear Derating Factor
520 Watts 4.0 W/°C
TJ,TSTG TL IAR EAR EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
-55 to 150 300 50 50 1600
°C Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS RDS(on)
IDSS
IGSS VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 23A) Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
500 3
0.100 250 1000 ±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com
UNIT Volts Ohms
µA
nA Volts
050-7028 Rev D 9-2004
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
Eon Eoff
Eon
Eoff
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Turn-on Switching Energy 6 Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
VGS = 0V VDS = 25V f = 1 MHz
VGS = 10V VDD = 250V ID = 46A @ 25°C
RESISTIVE SWITCHING
VGS = 15V VDD = 250V ID = 46A@ 25°C RG = 0.6Ω INDUCTIVE SWITCHING @ 25°C VDD = 333V, VGS = 15V ID = 46A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C VDD = 333V VGS = 15V ID = 46A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions
IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) VSD Diode Forward Voltage 2 (VGS = 0V, IS = -46A) dv/dt Peak Diode Recovery dv/dt 5
trr
Reverse .