APT5010JN

D S G D S G S SO 2 T- 27 APT5010JN APT5012JN 500V 500V 48.0A 0.10Ω 43.0A 0.12Ω ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage ® SINGLE DIE ISOTOP® PACKAGE All Ratings: TC = 25°C unless otherwise specified. APT 5010JN APT 5012JN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500 48 192 ± 30 520 4.16 500 43 172 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 and Inductive Current Clamped Volts Watts W/°C °C -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 µA) On State Drain Current 2 MIN APT5010JN APT5012JN APT5010JN APT5012JN APT5010JN APT5012JN TYP MAX UNIT Volts 500 500 48 Amps ID(ON) (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 2 43 0.10 Ohms RDS(ON) 0.12 250 1000 ± 100 2 4 µA nA Volts IDSS IGSS VGS(TH) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ± 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, I D = 2.5mA) THERMAL CHARACTERISTICS Symbol RΘJC RΘCS C...