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APT5016SFLL Dataheets PDF



Part Number APT5016SFLL
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description Power MOSFET
Datasheet APT5016SFLL DatasheetAPT5016SFLL Datasheet (PDF)

APT5016BFLL APT5016SFLL 500V 30A 0.160Ω POWER MOS 7 R FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering aanlodnQg g.wiPthoweexrcMepOtiSon7a®llcyomfabsitnesswliotcwheinr gcosnpdeuectdiosn and switching inherent with lRoDsSs(eONs) APT's patented metal gate structure. TO-247 D3PAK • Lower Input Capacitance • Lower Miller Capacitance • .

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APT5016BFLL APT5016SFLL 500V 30A 0.160Ω POWER MOS 7 R FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering aanlodnQg g.wiPthoweexrcMepOtiSon7a®llcyomfabsitnesswliotcwheinr gcosnpdeuectdiosn and switching inherent with lRoDsSs(eONs) APT's patented metal gate structure. TO-247 D3PAK • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package • FAST RECOVERY BODY DIODE D G S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT5016BFLL_SFLL UNIT VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient 500 Volts 30 Amps 120 ±30 Volts ±40 PD Total Power Dissipation @ TC = 25°C Linear Derating Factor 329 2.63 Watts W/°C TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 30 30 1300 °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = 10V, 15A) Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) 500 3 0.160 250 1000 ±100 5 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT Volts Ohms µA nA Volts 050-7026 Rev C 6-2004 DYNAMIC CHARACTERISTICS APT5016BFLL_SFLL Symbol Characteristic Test Conditions Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 30A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 30A @ 25°C RG = 1.6Ω INDUCTIVE SWITCHING @ 25°C VDD = 333V, VGS = 15V ID = 30A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C VDD = 333V VGS = 15V ID = 30A, RG = 5Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) VSD Diode Forward Voltage 2 (VGS = 0V, IS = -30A) dv/dt Peak Diode Recovery dv/dt 5 trr Reverse Recovery Time (IS = -30A, di/dt = 100A/µs) Tj = 25°C Tj = 125°C Reverse Recovery Charge Qrr (IS = -30A, di/dt = 100A/µs) Tj = 25°C Tj = 125°C Peak Recovery Current IRRM (IS = -30A, di/dt = 100A/µs) Tj = 25°C Tj = 125°C MIN MIN TYP 2833 600 60 72 16 42 10 10 27 14 256 172 476 215 MAX UNIT pF nC ns µJ TYP MAX UNIT 30 Amps 120 1.3 Volts 15 V/ns 250 ns 500 1.3 µC 4.5 12 18 Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT RθJC RθJA Junction to Case Junction to Ambient 0.38 40 °C/W 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 2.89mH, RG = 25Ω, Peak IL = 30A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID30A di/dt ≤ 700A/µs VR ≤ 500 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.40 0.35 0.9 050-7026 Rev C 6-2004 ZθJC, THERMAL IMPEDANCE (°C/W) PDM 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 0.7 0.5 Note: 0.3 t1 0.1 0.05 SINGLE PULSE t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves Junction temp. (°C) RC MODEL 0.0174 Power (watts) 0.143 Case temperature. (°C) 0.219 0.00401F 0.00641F 0.158F ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 100 80 VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 60 40 TJ = +125°C 20 TJ = +25°C TJ = -55°C 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 30 25 20 15 10 5 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 ID = 15A VGS = 10V 2.


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