Document
APT5016BFLL APT5016SFLL
500V 30A 0.160Ω
POWER MOS 7 R FREDFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering
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and switching inherent with
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patented metal gate structure.
TO-247
D3PAK
• Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg
• Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package • FAST RECOVERY BODY DIODE
D
G S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT5016BFLL_SFLL UNIT
VDSS ID IDM VGS
VGSM
Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1
Gate-Source Voltage Continuous Gate-Source Voltage Transient
500 Volts
30 Amps
120
±30 Volts ±40
PD
Total Power Dissipation @ TC = 25°C Linear Derating Factor
329 2.63
Watts W/°C
TJ,TSTG TL IAR EAR EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
-55 to 150 300 30 30 1300
°C Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS RDS(on)
IDSS
IGSS VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = 10V, 15A) Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
500 3
0.160 250 1000 ±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT Volts Ohms
µA
nA Volts
050-7026 Rev C 6-2004
DYNAMIC CHARACTERISTICS
APT5016BFLL_SFLL
Symbol Characteristic
Test Conditions
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
Eon
Eoff
Eon
Eoff
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6
Turn-off Switching Energy Turn-on Switching Energy 6
Turn-off Switching Energy
VGS = 0V VDS = 25V f = 1 MHz
VGS = 10V VDD = 250V ID = 30A @ 25°C
RESISTIVE SWITCHING
VGS = 15V VDD = 250V ID = 30A @ 25°C RG = 1.6Ω INDUCTIVE SWITCHING @ 25°C VDD = 333V, VGS = 15V ID = 30A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C VDD = 333V VGS = 15V ID = 30A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -30A) dv/dt Peak Diode Recovery dv/dt 5
trr
Reverse Recovery Time (IS = -30A, di/dt = 100A/µs)
Tj = 25°C Tj = 125°C
Reverse Recovery Charge Qrr (IS = -30A, di/dt = 100A/µs)
Tj = 25°C Tj = 125°C
Peak Recovery Current IRRM (IS = -30A, di/dt = 100A/µs)
Tj = 25°C Tj = 125°C
MIN MIN
TYP
2833 600 60 72 16 42 10 10 27 14 256
172 476
215
MAX
UNIT pF nC ns
µJ
TYP MAX UNIT 30 Amps 120 1.3 Volts 15 V/ns 250 ns 500
1.3 µC 4.5 12 18 Amps
THERMAL CHARACTERISTICS Symbol Characteristic
MIN TYP MAX UNIT
RθJC RθJA
Junction to Case Junction to Ambient
0.38 40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.89mH, RG = 25Ω, Peak IL = 30A 5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID30A di/dt ≤ 700A/µs VR ≤ 500 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.40
0.35
0.9
050-7026 Rev C 6-2004 ZθJC, THERMAL IMPEDANCE (°C/W) PDM
0.30 0.25 0.20 0.15 0.10 0.05
0 10-5
0.7
0.5 Note:
0.3 t1
0.1 0.05
SINGLE PULSE
t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
Junction temp. (°C)
RC MODEL 0.0174
Power (watts)
0.143
Case temperature. (°C)
0.219
0.00401F 0.00641F 0.158F
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100 80
VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE
60
40
TJ = +125°C 20
TJ = +25°C
TJ = -55°C
0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
30
25
20
15
10
5
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
ID = 15A VGS = 10V
2.