Document
D
TO-247
G S
APT5025BN 500V
®
23.0A 0.25Ω 21.0A 0.30Ω
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT5030BN 500V
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: TC = 25°C unless otherwise specified.
APT 5025BN APT 5030BN UNIT Volts Amps
500 23 92 ± 30 310 2.48
500 21 84
Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
1
Volts Watts W/°C °C
-55 to 150 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current
2
MIN APT5025BN APT5030BN APT5025BN APT5030BN APT5025BN APT5030BN
TYP
MAX
UNIT Volts
500 500 23
Amps
ID(ON)
(VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
2
21 0.25
Ohms
RDS(ON)
0.30 250 1000 ± 100 2 4
µA nA Volts
IDSS IGSS VGS(TH)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ± 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
THERMAL CHARACTERISTICS
Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W
050-5007 Rev C
0.40 40
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
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EUROPE
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DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT5025/5030BN
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V ID = ID [Cont.] @ 25°C VGS = 15V ID = ID [Cont.] @ 25°C RG = 1.8Ω VDD = 0.5 VDSS VDD = 0.5 VDSS MIN TYP MAX UNIT
2380 522 196 83 12.6 51 14 27 61 36
2950 730 290 130 19 76 28 55 92 71
ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions / Part Number Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage
1
MIN APT5025BN APT5030BN APT5025BN APT5030BN
TYP
MAX
UNIT
23 21 92 84 1.3 320 5.5 640 11
Volts ns µC Amps
2
(VGS = 0V, IS = -ID [Cont.])
Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/ µs) Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/ µs)
SAFE OPERATING AREA CHARACTERISTICS
Symbol SOA1 SOA2 ILM Characteristic Safe Operating Area Safe Operating Area Inductive Current Clamped Test Conditions / Part Number VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec. IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec. APT5025BN APT5030BN MIN TYP MAX UNIT Watts
310 310 92 84
Amps
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 1.0 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.5 D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 SINGLE PULSE 0.001 10-5
PDM
0.02 0.01
Note:
t1 t2 2 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t
050-5007 Rev C
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
APT5025/5030BN
20 VGS=10V ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 16 6V 8 10 VGS=10V 6V 5.5V
12 5.5V 8 5V 4 4.5V 4V 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0 20
6
5V
4
2
4.5V 4V
0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 2.50
TJ = 25°C 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE NORMALIZED TO V = 10V @ 0.5 I [Cont.]
GS D
0
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE
TJ = +25°C TJ = +125°C
ID, DRAIN CURRENT (AMPERES)
15
2.00
10
1.50
VGS=10V
5 TJ = +125°C TJ = +25°C 0 TJ = -55°C
1.00
VGS=20V
0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 24 ID, DRAIN CURRENT (AMPERES)
0.50
0
10 20 30 40 50 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.2
20 16 12 8 4
APT5025BN
1.1
APT5030BN
1.0
0.9
0.8
50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT v.