APT50GF120JRD

APT50GF120JRD 1200V 75A E C Fast IGBT & FRED The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. E G SO ISOTOP ® 2 T- 27 "UL Recognized" Low Forward Voltage Drop High Freq. Switching to 20KHz Low Tail Current Ultra Low Leakage Current RBSOA and SCSOA Rated Ultrafast Soft Recovery Antiparallel Diode MAXIMUM RATINGS (IGBT) Symbol VCES VCGR VGE I C1 I C2 I CM1 I CM2 PD TJ,TSTG TL Parameter Collector-Emitter Voltage C G E APT50GF120JRD UNIT All Ratings: TC = 25°C unless otherwise specified. 1200 RY A IN MIN Collector-Gate Voltage (RGE = 20KΩ) Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 90°C Pulsed Collector Current Pulsed Collector Current Total Power Dissipation 1 1 1200 ±20 75 50 150 100 460 -55 to 150 300 Watts °C Amps Volts @ TC = 25°C @ TC = 90°C Operating and Storage Junction Temperature Range STATIC ELECTRICAL CHARACTERISTICS (IGBT) Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) Collector C...