Document
APT50GF60B2RD APT50GF60LRD
600V
APT50GF60B2RD
80A
TO-264 (LRD)
Fast IGBT & FRED
The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.
G
T-Max™ (B2RD)
• Low Forward Voltage Drop • High Freq. Switching to 20KHz • Low Tail Current • Ultra Low Leakage Current • RBSOA and SCSOA Rated • Ultrafast Soft Recovery Antiparallel Diode
MAXIMUM RATINGS (IGBT)
Symbol VCES VCGR VGE I C1 I C2 I CM1 I CM2 PD TJ,TSTG TL Parameter Collector-Emitter Voltage
C
G
E
C
C
E
APT50GF60LRD
G E
APT50GF60B2RD/LRD UNIT
All Ratings: TC = 25°C unless otherwise specified.
600
RY A IN
MIN
Collector-Gate Voltage (RGE = 20KΩ) Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 90°C Pulsed Collector Current Pulsed Collector Current Total Power Dissipation
1 1
600 ±20 80 50 160 100 300 -55 to 150 300
Watts °C Amps Volts
@ TC = 25°C @ TC = 90°C
Operating and Storage Junction Temperature Range
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.50mA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 125°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
2 2
PR
EL I
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
M
TYP
MAX
UNIT
600 4.5 5.5 2.1 2.2 6.5 2.7 2.8 0.50 TBD ±100
mA nA
052-6253 Rev A
Volts
I CES I GES
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
APT Website - http://www.advancedpower.com
Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS (IGBT)
Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT50GF60B2RD/LRD
Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES Resistive Switching (25°C) VGE = 15V I C = I C2 VCC = .8VCES I C = I C2 MIN TYP MAX UNIT
2600 475 165 170 25 100 20 100 160 200 30 90 290 170 2.2 2.4 4.6
3600 710 250 225 45 140
nC pF
Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
RY
6
MIN
ns
IN
RG = 10Ω
A
50 135 435 340
ns
IM EL
4
Inductive Switching (150°C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10Ω TJ = +150°C
Turn-on Switching Energy
Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time
4
mJ
PR
Inductive Switching (25°C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10Ω
30 90 260 100 4.3
mJ S ns
Turn-off Delay Time Fall Time Total Switching Losses
4
TJ = +25°C VCE = 20V, I C = I C2
Forward Transconductance
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol RΘJC RΘJA WT Characteristic Junction to Case (IGBT) Junction to Case (FRED) Junction to Ambient TYP MAX UNIT
0.42 0.66 40 0.22
oz gm °C/W
Package Weight
6.1 10
lb•in N•m
Torque
1
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
1.1
052-6253 Rev A Repetitive Rating: Pulse width limited by maximum junction temperature. Leakages include the FRED and IGBT. See MIL-STD-750 Method 3471 Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein. 2 3 4
APT50GF60B2RD/LRD
PRELIMINARY
Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C
320
Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C
80
W
A
Ptot
240
IC
60
200
50
160
40
120
30
80
20
40 0 0
10 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC
TC
Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 3
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T
10 0
IGBT
A
t = 2.9µs p
K/W
IC
10 2
10 µs
ZthJC
10 -1
100 µs
10 1
1 ms
D = 0.50
10 ms
0.20 10 -2 0.10 0.05 single pulse 0.02 0.01
10 0 DC
10 -1 0 10
10
1
10
2
V 10
3
10 -3 -5 10
10
-4
10
-3
10
-2
10
-1
s 10
0
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Bend, Oregon 97702 -1035 Phone: (33) 5 57 92 15 15 Phone: (541) 382-8028 FAX: (33) 5 56 47 97 61 FAX: (541) 388-0364
USA
405 S.W. Columbia Street
052-6253 Rev A
VCE
tp
APT50GF60B2RD/LRD
PRELI.