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APT50GF60B2RD Dataheets PDF



Part Number APT50GF60B2RD
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description The Fast IGBT is a new generation of high voltage power IGBTs.
Datasheet APT50GF60B2RD DatasheetAPT50GF60B2RD Datasheet (PDF)

APT50GF60B2RD APT50GF60LRD 600V APT50GF60B2RD 80A TO-264 (LRD) Fast IGBT & FRED The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G T-Max™ (B2RD) • Low Forward Voltage Drop • High Freq. Switching to 20KHz • Low Tail Current • Ultra Low Leakage Current • RBSOA and SCSOA Rated • Ultrafast Soft Recovery An.

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APT50GF60B2RD APT50GF60LRD 600V APT50GF60B2RD 80A TO-264 (LRD) Fast IGBT & FRED The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G T-Max™ (B2RD) • Low Forward Voltage Drop • High Freq. Switching to 20KHz • Low Tail Current • Ultra Low Leakage Current • RBSOA and SCSOA Rated • Ultrafast Soft Recovery Antiparallel Diode MAXIMUM RATINGS (IGBT) Symbol VCES VCGR VGE I C1 I C2 I CM1 I CM2 PD TJ,TSTG TL Parameter Collector-Emitter Voltage C G E C C E APT50GF60LRD G E APT50GF60B2RD/LRD UNIT All Ratings: TC = 25°C unless otherwise specified. 600 RY A IN MIN Collector-Gate Voltage (RGE = 20KΩ) Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 90°C Pulsed Collector Current Pulsed Collector Current Total Power Dissipation 1 1 600 ±20 80 50 160 100 300 -55 to 150 300 Watts °C Amps Volts @ TC = 25°C @ TC = 90°C Operating and Storage Junction Temperature Range STATIC ELECTRICAL CHARACTERISTICS (IGBT) Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.50mA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 125°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V) 2 2 PR EL I Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. M TYP MAX UNIT 600 4.5 5.5 2.1 2.2 6.5 2.7 2.8 0.50 TBD ±100 mA nA 052-6253 Rev A Volts I CES I GES CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street APT Website - http://www.advancedpower.com Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord DYNAMIC CHARACTERISTICS (IGBT) Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT50GF60B2RD/LRD Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES Resistive Switching (25°C) VGE = 15V I C = I C2 VCC = .8VCES I C = I C2 MIN TYP MAX UNIT 2600 475 165 170 25 100 20 100 160 200 30 90 290 170 2.2 2.4 4.6 3600 710 250 225 45 140 nC pF Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time RY 6 MIN ns IN RG = 10Ω A 50 135 435 340 ns IM EL 4 Inductive Switching (150°C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10Ω TJ = +150°C Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time 4 mJ PR Inductive Switching (25°C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10Ω 30 90 260 100 4.3 mJ S ns Turn-off Delay Time Fall Time Total Switching Losses 4 TJ = +25°C VCE = 20V, I C = I C2 Forward Transconductance THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED) Symbol RΘJC RΘJA WT Characteristic Junction to Case (IGBT) Junction to Case (FRED) Junction to Ambient TYP MAX UNIT 0.42 0.66 40 0.22 oz gm °C/W Package Weight 6.1 10 lb•in N•m Torque 1 Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw 1.1 052-6253 Rev A Repetitive Rating: Pulse width limited by maximum junction temperature. Leakages include the FRED and IGBT. See MIL-STD-750 Method 3471 Switching losses include the FRED and IGBT. APT Reserves the right to change, without notice, the specifications and information contained herein. 2 3 4 APT50GF60B2RD/LRD PRELIMINARY Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C 320 Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 80 W A Ptot 240 IC 60 200 50 160 40 120 30 80 20 40 0 0 10 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 TC TC Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 3 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 0 IGBT A t = 2.9µs p K/W IC 10 2 10 µs ZthJC 10 -1 100 µs 10 1 1 ms D = 0.50 10 ms 0.20 10 -2 0.10 0.05 single pulse 0.02 0.01 10 0 DC 10 -1 0 10 10 1 10 2 V 10 3 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Bend, Oregon 97702 -1035 Phone: (33) 5 57 92 15 15 Phone: (541) 382-8028 FAX: (33) 5 56 47 97 61 FAX: (541) 388-0364 USA 405 S.W. Columbia Street 052-6253 Rev A VCE tp APT50GF60B2RD/LRD PRELI.


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