Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT50M60L2VFR
500V 77A 0.060W
POWER MOS V ®
FREDFET
TO-264 Max
Power MOS V® is a new generation of high voltage N-Cha...
Description
APT50M60L2VFR
500V 77A 0.060W
POWER MOS V ®
FREDFET
TO-264 Max
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
TO-264 MAX Package Lower Leakage Fast Recovery Body Diode
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
Faster Switching 100% Avalanche Tested
G
D
S
All Ratings: TC = 25°C unless otherwise specified.
APT50M60L2VFR UNIT Volts Amps
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L A C I N H C N E T O I E T C MA N A OR V AD INF
500 77 308 ±30 ±40 825 6.6 -55 to 150 300 77 50
(Repetitive and Non-Repetitive)
1 4
Volts Watts W/°C °C Amps mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
500 77 0.060 250 1000 ±100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Res...
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