Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
APT50M80B2LC APT50M80LLC
500V 58A 0.080W
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high vol...
Description
APT50M80B2LC APT50M80LLC
500V 58A 0.080W
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. Identical Specifications: T-MAX™ or TO-264 Package Lower Gate Charge & Capacitance Easier To Drive 100% Avalanche Tested Faster switching
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter
B2LC
T-MAX™
TO-264
LLC
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT50M80 UNIT Volts Amps
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L A C I N H C N E T O I D T E A C M N R A O V F D N A I
500 58 232 ±30 ±40 625 5.0 -55 to 150 300 58 50
(Repetitive and Non-Repetitive)
1 4
Volts Watts W/°C °C Amps mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps...
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