APT6017LLL

APT6017B2LL APT6017LLL 600V 35A 0.170Ω POWER MOS 7 R MOSFET B2LL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering and Qg. Power MOS 7® combines lower conduction and switching lRoDsSs(eONs) along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. T-MAX™ TO-264 LLL Lower Input Capacitance Increased Power Dissipation D Lower Miller Capacitance Lower Gate Charge, Qg MAXIMUM RATINGS Easier To Drive Popular T-MAX™ or TO-264 Package G S All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT6017B2LL_LLL UNIT VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient 600 Volts 35 Amps 140 ±30 Volts ±40 PD Total Power Dissipation @ TC = 25°C Linear Derating Factor 500 Watts 4.0 W/°C TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 35 35 1600 °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions BVDSS RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance...