APT6030BVR

APT6030BVR APT6030SVR 600V 21A 0.300Ω POWER MOS V® MOSFET BVR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. TO-247 D3PAK SVR Faster Switching Avalanche Energy Rated Lower Leakage D TO-247 or Surface Mount D3PAK Package G MAXIMUM RATINGS Symbol Parameter VDSS ID IDM VGS VGSM PD Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 S All Ratings: TC = 25°C unless otherwise specified. APT6030BVR_SVR UNIT 600 Volts 21 Amps 84 ±30 Volts ±40 298 Watts 2.38 W/°C -55 to 150 300 21 °C Amps 30 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 600 RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 10.5A) IDSS Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) ...