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APT60GT60BR

Advanced Power Technology

The Thunderbolt IGBT is a new generation of high voltage power IGBTs.

APT60GT60BR 600V 116A Thunderbolt IGBT™ TO-247 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. ...


Advanced Power Technology

APT60GT60BR

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APT60GT60BR 600V 116A Thunderbolt IGBT™ TO-247 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. Low Forward Voltage Drop Low Tail Current Avalanche Rated MAXIMUM RATINGS Symbol VCES VCGR VEC VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage High Freq. Switching to 150KHz Ultra Low Leakage Current RBSOA and SCSOA Rated G C E C G E All Ratings: TC = 25°C unless otherwise specified. Collector-Gate Voltage (RGE = 20KΩ) Emitter-Collector Voltage Gate-Emitter Voltage JE SP CT EC IVE IF T IC EC AT H IO NI N CA 1 L 600 600 15 ±20 116 60 220 120 65 500 300 TYP APT60GT60BR UNIT Volts Continuous Collector Current @ TC = 25°C @ TC = 25°C Continuous Collector Current @ TC = 105°C Pulsed Collector Current @ TC = 105°C 2 Amps Pulsed Collector Current 1 Single Pulse Avalanche Energy Total Power Dissipation mJ Watts °C Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES RBVCES VGE(TH) VCE(ON) Characteristic / Test Conditions MIN MAX UNIT Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA, Tj = -55°C) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I...




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