APT60GT60JRD

APT60GT60JRD 600V 90A E C Thunderbolt IGBT™ & FRED The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and ultrafast switching speed. E G SO ISOTOP ® 2 T- 27 "UL Recognized" Low Forward Voltage Drop Low Tail Current Ultrafast Soft Recovery Antiparallel Diode MAXIMUM RATINGS (IGBT) Symbol VCES VCGR VGE I C1 I C2 I CM1 I CM2 PD TJ,TSTG TL Parameter Collector-Emitter Voltage High Freq. Switching to 150KHz Ultra Low Leakage Current RBSOA and SCSOA Rated C G E All Ratings: TC = 25°C unless otherwise specified. APT60GF60JRD UNIT 600 RY A IN MIN Collector-Gate Voltage (RGE = 20KΩ) Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current Pulsed Collector Current Total Power Dissipation 1 1 600 ±20 90 60 180 120 375 -55 to 150 300 Watts °C Amps Volts @ TC = 25°C @ TC = 110°C Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS (IGBT) Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C =...