Document
APT60M75L2LL
600V 73A 0.075Ω
POWER MOS 7 R MOSFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed and Qg. Power MOS
with Power MOS 7® by significantly lowering 7® combines lower conduction and switching
RDS(ON) losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance • Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation • Easier To Drive
• Popular TO-264 MAX Package
TO-264 Max
D G
S
MAXIMUM RATINGS Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT60M75L2LL
UNIT
VDSS ID IDM
VGS VGSM
PD
TJ,TSTG TL IAR EAR EAS
Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
600 73 292 ±30 ±40 893 7.14 -55 to 150 300 73 50 3200
Volts Amps
Volts Watts W/°C
°C Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS RDS(on)
IDSS
IGSS VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 36.5A) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA)
600 3
0.075 100 500 ±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Volts Ohms
µA
nA Volts
APT Website - http://www.advancedpower.com
050-7097 Rev B 9-2004
DYNAMIC CHARACTERISTICS
APT60M75L2LL
Symbol
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
Eon
Eoff
Eon
Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz
VGS = 10V VDD = 300V ID = 73A @ 25°C
RESISTIVE SWITCHING VGS = 15V VDD = 300V
ID = 73A @ 25°C RG = 0.6Ω
INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 73A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C VDD = 400V VGS = 15V ID = 73A, RG = 5Ω
MIN TYP MAX UNIT
8930
1130 50
pF
195
48 nC
100
23
19 55 ns
8
1515
1745 2345
µJ
1950
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) VSD Diode Forward Voltage 2 (VGS = 0V, IS = -73A) t rr Reverse Recovery Time (IS = -73A, dlS/dt = 100A/µs) Q rr Reverse Recovery Charge (IS = -73A, dlS/dt = 100A/µs) dv/dt Peak Diode Recovery dv/dt 5
THERMAL CHARACTERISTICS
Symbol Characteristic
RθJC RθJA
Junction to Case Junction to Ambient
73 Amps
292 1.3 Volts 857 ns 26 µC 8 V/ns
MIN TYP MAX UNIT 0.14 °C/W 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.20mH, RG = 25Ω, Peak IL = 73A 5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID73A di/dt ≤ 700A/µs VR ≤ 600V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
050-7097 Rev B 9-2004 ZθJC, THERMAL IMPEDANCE (°C/W) PDM
0.16
0.14 0.9
0.12
0.10 0.7
0.08 0.06 0.04 0.02
0 10-5
0.5 Note:
t1
0.3 t2
0.1 0.05
SINGLE PULSE
Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
Junction temp. (°C)
Power (watts)
Case temperature. (°C)
RC MODEL 0.0484 0.0903
0.0236F 0.400F
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
180
160 140
VDS> ID (ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE
120
100 TJ = -50°C 80 TJ = +25°C 60 TJ = +125°C 40
20
00 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE4, TRANSFERCHARACTERISTICS
80
70
60
50
40
30
20
10
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
ID = 36.5A VGS = 10V
2.0
1.5
1.0
0.5
0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, RDS(ON) vs. TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
.