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APT60M75L2LL Dataheets PDF



Part Number APT60M75L2LL
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description Power MOS 7 MOSFET
Datasheet APT60M75L2LL DatasheetAPT60M75L2LL Datasheet (PDF)

APT60M75L2LL 600V 73A 0.075Ω POWER MOS 7 R MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS 7® by significantly lowering 7® combines lower conduction and switching RDS(ON) losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Char.

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APT60M75L2LL 600V 73A 0.075Ω POWER MOS 7 R MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS 7® by significantly lowering 7® combines lower conduction and switching RDS(ON) losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • Popular TO-264 MAX Package TO-264 Max D G S MAXIMUM RATINGS Symbol Parameter All Ratings: TC = 25°C unless otherwise specified. APT60M75L2LL UNIT VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 600 73 292 ±30 ±40 893 7.14 -55 to 150 300 73 50 3200 Volts Amps Volts Watts W/°C °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BVDSS RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 36.5A) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) 600 3 0.075 100 500 ±100 5 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Volts Ohms µA nA Volts APT Website - http://www.advancedpower.com 050-7097 Rev B 9-2004 DYNAMIC CHARACTERISTICS APT60M75L2LL Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 73A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 73A @ 25°C RG = 0.6Ω INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 73A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C VDD = 400V VGS = 15V ID = 73A, RG = 5Ω MIN TYP MAX UNIT 8930 1130 50 pF 195 48 nC 100 23 19 55 ns 8 1515 1745 2345 µJ 1950 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) VSD Diode Forward Voltage 2 (VGS = 0V, IS = -73A) t rr Reverse Recovery Time (IS = -73A, dlS/dt = 100A/µs) Q rr Reverse Recovery Charge (IS = -73A, dlS/dt = 100A/µs) dv/dt Peak Diode Recovery dv/dt 5 THERMAL CHARACTERISTICS Symbol Characteristic RθJC RθJA Junction to Case Junction to Ambient 73 Amps 292 1.3 Volts 857 ns 26 µC 8 V/ns MIN TYP MAX UNIT 0.14 °C/W 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 1.20mH, RG = 25Ω, Peak IL = 73A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID73A di/dt ≤ 700A/µs VR ≤ 600V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 050-7097 Rev B 9-2004 ZθJC, THERMAL IMPEDANCE (°C/W) PDM 0.16 0.14 0.9 0.12 0.10 0.7 0.08 0.06 0.04 0.02 0 10-5 0.5 Note: t1 0.3 t2 0.1 0.05 SINGLE PULSE Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves Junction temp. (°C) Power (watts) Case temperature. (°C) RC MODEL 0.0484 0.0903 0.0236F 0.400F ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 180 160 140 VDS> ID (ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 120 100 TJ = -50°C 80 TJ = +25°C 60 TJ = +125°C 40 20 00 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE4, TRANSFERCHARACTERISTICS 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 ID = 36.5A VGS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, RDS(ON) vs. TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) .


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