Power MOSFET
APT8020JFLL
800V 33A 0.200W
POWER MOS 7TM
FREDFET
S G D S
Power MOS 7TM is a new generation of low loss, high voltage...
Description
APT8020JFLL
800V 33A 0.200W
POWER MOS 7TM
FREDFET
S G D S
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
SO
ISOTOP ®
2 T-
27
"UL Recognized"
Increased Power Dissipation Easier To Drive Popular SOT-227 Package FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT8020JFLL UNIT Volts Amps
800 33 142 ±30 ±40 520 4.16 -55 to 150 300 33 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State D...
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