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APT8043BLL Dataheets PDF



Part Number APT8043BLL
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description Power MOSFET
Datasheet APT8043BLL DatasheetAPT8043BLL Datasheet (PDF)

APT8043BLL APT8043SLL 800V 20A 0.430Ω POWER MOS 7 R MOSFET BLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS 7® by significantly lowering 7® combines lower conduction and switching RDS(ON) losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Increased Power Dissipation .

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APT8043BLL APT8043SLL 800V 20A 0.430Ω POWER MOS 7 R MOSFET BLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS 7® by significantly lowering 7® combines lower conduction and switching RDS(ON) losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Increased Power Dissipation TO-247 D3PAK SLL D • Lower Miller Capacitance • Easier To Drive • Lower Gate Charge, Qg • TO-247 or Surface Mount D3PAK Package G S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT8043BLL_SLL UNIT VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient 800 Volts 20 Amps 80 ±30 Volts ±40 PD Total Power Dissipation @ TC = 25°C Linear Derating Factor 403 Watts 3.23 W/°C TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 20 30 1300 °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 800 RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 5A) 0.43 IDSS Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C) 500 IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3 5 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. UNIT Volts Ohms µA nA Volts APT Website - http://www.advancedpower.com 050-7056 Rev C 7-2004 DYNAMIC CHARACTERISTICS APT8043BLL_SLL Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 20A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 20A @ 25°C RG = 1.6Ω INDUCTIVE SWITCHING @ 25°C VDD = 533V, VGS = 15V ID = 20A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C VDD = 533V, VGS = 15V ID = 20A, RG = 5Ω MIN TYP 2500 485 80 85 13 55 9 5 25 5 280 125 460 160 MAX UNIT pF nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) VSD Diode Forward Voltage 2 (VGS = 0V, IS = -20A) t rr Reverse Recovery Time (IS = -20A, dlS/dt = 100A/µs) Q rr Reverse Recovery Charge (IS = -20A, dlS/dt = 100A/µs) dv/dt Peak Diode Recovery dv/dt 5 THERMAL CHARACTERISTICS Symbol Characteristic RθJC RθJA Junction to Case Junction to Ambient 20 Amps 80 1.3 Volts 680 ns 10.6 µC 10 V/ns MIN TYP MAX UNIT 0.31 °C/W 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 6.50mH, RG = 25Ω, Peak IL = 20A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID20A di/dt ≤ 700A/µs VR ≤ 800 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7056 Rev C 7-2004 ZθJC, THERMAL IMPEDANCE (°C/W) PDM 0.35 0.30 0.9 0.25 0.20 0.15 0.10 0.05 0 10-5 0.7 0.5 Note: 0.3 t1 0.1 0.05 SINGLE PULSE t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves Junction temp. (°C) RC MODEL 0.0258 Power (watts) 0.107 Case temperature. (°C) 0.177 0.00295F 0.0114F 0.174F ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 80 VDS> ID (ON) x RDS (ON)MAX. 70 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 60 50 40 30 TJ = +125°C 20 10 TJ = +25°C TJ = -55°C 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 ID = 5A VGS = 10V 2.0 1.5 1.0 0.


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