Document
APT8043BLL APT8043SLL
800V 20A 0.430Ω
POWER MOS 7 R MOSFET
BLL
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed and Qg. Power MOS
with Power MOS 7® by significantly lowering 7® combines lower conduction and switching
RDS(ON) losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance • Increased Power Dissipation
TO-247
D3PAK
SLL
D
• Lower Miller Capacitance • Easier To Drive
• Lower Gate Charge, Qg
• TO-247 or Surface Mount D3PAK Package
G S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT8043BLL_SLL
UNIT
VDSS ID IDM
VGS VGSM
Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient
800
Volts
20 Amps
80
±30 Volts
±40
PD
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
403
Watts
3.23
W/°C
TJ,TSTG TL IAR EAR EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
-55 to 150 300 20 30 1300
°C Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 5A)
0.43
IDSS
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
500
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT Volts Ohms
µA
nA Volts
APT Website - http://www.advancedpower.com
050-7056 Rev C 7-2004
DYNAMIC CHARACTERISTICS
APT8043BLL_SLL
Symbol
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
Eon
Eoff
Eon
Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz
VGS = 10V VDD = 400V ID = 20A @ 25°C
RESISTIVE SWITCHING VGS = 15V VDD = 400V
ID = 20A @ 25°C RG = 1.6Ω
INDUCTIVE SWITCHING @ 25°C VDD = 533V, VGS = 15V ID = 20A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C VDD = 533V, VGS = 15V ID = 20A, RG = 5Ω
MIN
TYP 2500 485
80 85 13 55 9 5 25 5 280 125
460
160
MAX
UNIT pF nC ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -20A)
t rr
Reverse Recovery Time (IS = -20A, dlS/dt = 100A/µs)
Q rr Reverse Recovery Charge (IS = -20A, dlS/dt = 100A/µs)
dv/dt Peak Diode Recovery dv/dt 5
THERMAL CHARACTERISTICS
Symbol Characteristic
RθJC RθJA
Junction to Case Junction to Ambient
20 Amps
80
1.3 Volts
680
ns
10.6
µC
10 V/ns
MIN TYP MAX UNIT 0.31 °C/W 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 6.50mH, RG = 25Ω, Peak IL = 20A 5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID20A di/dt ≤ 700A/µs VR ≤ 800 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7056 Rev C 7-2004 ZθJC, THERMAL IMPEDANCE (°C/W)
PDM
0.35
0.30
0.9
0.25 0.20 0.15 0.10 0.05
0 10-5
0.7
0.5 Note:
0.3
t1
0.1 0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
Junction temp. (°C)
RC MODEL 0.0258
Power (watts)
0.107
Case temperature. (°C)
0.177
0.00295F 0.0114F 0.174F
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 80
VDS> ID (ON) x RDS (ON)MAX.
70
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
50
40
30
TJ = +125°C 20
10 TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
20
18
16
14
12
10
8
6
4
2
0
25
50
75
100 125 150
TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
ID = 5A
VGS = 10V
2.0
1.5
1.0
0.